Symbol
V
DSS
I
D
I
DM
, l
LM
V
GS
P
D
T
J
,T
STG
T
L
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25°C
Pulsed Drain Current
1
and Inductive Current Clamped
Gate-Source Voltage
Total Power Dissipation @ T
C
= 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions / Part Number
Drain-Source Breakdown Voltage
(V
GS
= 0V, I
D
= 250 µA)
On State Drain Current

2
(V
DS
> I
D
(ON) x R
DS
(ON) Max, V
GS
= 10V)
Drain-Source On-State Resistance
2
(V
GS
= 10V, 0.5 I
D
[Cont.])
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 2.5mA)
THERMAL CHARACTERISTICS
Symbol
R
ΘJC
R
ΘCS
Characteristic
Junction to Case
Case to Sink (Use High Efficiency Thermal Joint Compound and Planer Heat Sink Surface.)
MIN TYP MAX
0.24
0.06
UNIT
°C/W
Symbol
BV
DSS
I
D
(ON)
R
DS
(ON)
I
DSS
I
GSS
V
GS
(TH)
MIN TYP MAX
APT10050JN 1000
APT10050JN 20.5
APT10050JN 0.50
250
1000
±100
24
UNIT
Volts
Amps
Ohms
µA
nA
Volts
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
APT
10050JN
1000
20.5
82
±30
520
4.16
-55 to 150
300
MAXIMUM RATINGS All Ratings: T
C
= 25°C unless otherwise specified.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
SOT-227
G
S
S
D
ISOTOP
®
"UL Recognized" File No. E145592 (S)
APT10050JN 1000V 20.5A 0.50Ω
SINGLE DIE ISOTOP
®
PACKAGE
N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
POWER MOS IV
®
050-0037 Rev F
USA
405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61
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