APT1002RCN
器件描述：N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
器件厂商：ADPOW [Advanced Power Technology]
文件大小：49.5KB，共4页
Sponsor by e络盟器件资料摘要：
MAXIMUM RATINGS All Ratings: T
C
= 25°C unless otherwise specified.
APT1002RCN 1000V 5.5A 2.00Ω
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61
APT Website - http://www.advancedpower.com
050-0015 Rev C
POWER MOS IV
TM
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
G
D
S
TO-254
Symbol
V
DSS
I
D
I
DM
V
GS
P
D
T
J
,T
STG
T
L
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25°C
Pulsed Drain Current
1
Gate-Source Voltage
Total Power Dissipation @ T
C
= 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
APT1002RCN
1000
5.5
22
±30
150
1.2
-55 to 150
300
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
STATIC ELECTRICAL CHARACTERISTICS
UNIT
Volts
Amps
Ohms
µA
nA
Volts
MIN TYP MAX
1000
5.5
2.00
250
1000
±100
2 4
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250µA)
On State Drain Current
2
(V
DS
> I
D
(ON) x R
DS
(ON) Max, V
GS
= 10V)
Drain-Source On-State Resistance
2
(V
GS
= 10V, 0.5 I
D
[Cont.])
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 1.0mA)
Symbol
BV
DSS
I
D
(ON)
R
DS
(ON)
I
DSS
I
GSS
V
GS
(TH)
SAFE OPERATING AREA CHARACTERISTICS
Symbol
SOA1
SOA2
I
LM
Characteristic
Safe Operating Area
Safe Operating Area
Inductive Current Clamped
Test Conditions
V
DS
= 0.4 V
DSS
, I
DS
= P
D
/ 0.4 V
DSS
, t = 1 Sec.
I
DS
= I
D
[Cont.], V
DS
= P
D
/ I
D
[Cont.], t = 1 Sec.
MIN TYP MAX
150
150
5.5
UNIT
Watts
Amps
C
= 25°C unless otherwise specified.
APT1002RCN 1000V 5.5A 2.00Ω
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61
APT Website - http://www.advancedpower.com
050-0015 Rev C
POWER MOS IV
TM
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
G
D
S
TO-254
Symbol
V
DSS
I
D
I
DM
V
GS
P
D
T
J
,T
STG
T
L
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25°C
Pulsed Drain Current
1
Gate-Source Voltage
Total Power Dissipation @ T
C
= 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
APT1002RCN
1000
5.5
22
±30
150
1.2
-55 to 150
300
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
STATIC ELECTRICAL CHARACTERISTICS
UNIT
Volts
Amps
Ohms
µA
nA
Volts
MIN TYP MAX
1000
5.5
2.00
250
1000
±100
2 4
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250µA)
On State Drain Current
2
(V
DS
> I
D
(ON) x R
DS
(ON) Max, V
GS
= 10V)
Drain-Source On-State Resistance
2
(V
GS
= 10V, 0.5 I
D
[Cont.])
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 1.0mA)
Symbol
BV
DSS
I
D
(ON)
R
DS
(ON)
I
DSS
I
GSS
V
GS
(TH)
SAFE OPERATING AREA CHARACTERISTICS
Symbol
SOA1
SOA2
I
LM
Characteristic
Safe Operating Area
Safe Operating Area
Inductive Current Clamped
Test Conditions
V
DS
= 0.4 V
DSS
, I
DS
= P
D
/ 0.4 V
DSS
, t = 1 Sec.
I
DS
= I
D
[Cont.], V
DS
= P
D
/ I
D
[Cont.], t = 1 Sec.
MIN TYP MAX
150
150
5.5
UNIT
Watts
Amps