APM3023N
器件描述:N-Channel Enhancement Mode MOSFET
文件大小:203.69KB,共12页
Sponsor by e络盟
器件资料摘要:
N-Channel Enhancement Mode MOSFET
Copyright ANPEC Electronics Corp.
Rev. A.6 - July., 2003
APM3023N
www.anpec.com.tw1
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Pin Description
Ordering and Marking Information
Features
Applications
• Switching Regulators
• Switching Converters
Absolute Maximum Ratings (T
A
= 25°C unless otherwise noted)
Symbol Parameter Rating Unit
V
DSS
Drain-Source Voltage 30
V
GSS
Gate-Source Voltage ±20
V
I
D
*
Maximum Drain Current – Continuous 30
I
DM
Maximum Drain Current – Pulsed 70
A
* Surface Mounted on FR4 Board, t ≤ 10 sec.
• 30V/30A, R
DS(ON)
=15mΩ(typ.) @ V
GS
=10V
R
DS(ON)
=22mΩ(typ.) @ V
GS
=5V
• Super High Dense Cell Design
• High Power and Current Handling Capability
• TO-252.TO-220 and SOT-223 Packages
Package Code
U : TO-252 V : SOT-223 F : TO-220
Operating Junction Temp. Range
C : -55 to 150 C
Handling Code
TR : Tape & Reel
°
APM3023N
Handling Code
Temp. Range
Package Code
- Date CodeXXXXX
XXXXX - Date CodeAPM3023N V :
APM3023N
XXXXX
APM3023N U/F:
:
APM3023N
XXXXX
1
2
3
S
D
G
TO-220 Package
G DS
123
Top View of TO-252
SDG
123
Top View of SOT-223