Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Simple Drive Requirement BV
DSS
20V
▼ Lower Gate Charge R
DS(ON)
50mΩ
▼ Fast Switching Characteristic I
D
6.2A
Description
Absolute Maximum Ratings
Symbol Units
V
DS
V
V
GS
V
I
D
@T
A
=25℃ A
I
D
@T
A
=70℃ A
I
DM
A
P
D
@T
A
=25℃ W
W/℃
T
STG
℃
T
J
℃
Symbol Value Unit
Rthj-a Thermal Resistance Junction-ambient
3
Max. 40 ℃/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Storage Temperature Range
Total Power Dissipation 3.2
-55 to 150
Operating Junction Temperature Range -55 to 150
Linear Derating Factor 0.025
Continuous Drain Current
3
5
Pulsed Drain Current
1
30
Gate-Source Voltage ±12
Continuous Drain Current
3
6.2
Parameter Rating
Drain-Source Voltage 20
200323041
AP9915K
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
low on-resistance and cost-effectiveness.
G
D
S
D
D
S
GSOT-223