Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol Typ Max
16.7 25
40 50
R
θJC
1.9 2.5Maximum Junction-to-Case
B
Steady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
°C/W
°C/W
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
V
V±12
Pulsed Drain Current
C
Power Dissipation
A
T
A
=25°C
Gate-Source Voltage
Drain-Source Voltage
Maximum Junction-to-Ambient
A
Steady-State
18
18
30
Avalanche Current
C
18
Power Dissipation
B
T
C
=25°C
P
D
Continuous Drain
Current
G
Maximum UnitsParameter
T
C
=25°C
T
C
=100°C
20
W
Junction and Storage Temperature Range
A
P
DSM
°C
2.5
1.6
-55 to 175
T
A
=70°C
I
D
A
Repetitive avalanche energy L=0.1mH
C
37 mJ
60
W
T
C
=100°C 30
AOD434
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 20V
I
D
= 18A (V
GS
= 10V)
R
DS(ON)
< 14mΩ (V
GS
= 10V)
R
DS(ON)
< 16mΩ (V
GS
= 4.5V)
R
DS(ON)
< 21mΩ (V
GS
= 2.5V)
R
DS(ON)
< 30mΩ (V
GS
= 1.8V)
ESD Rating: 2KV HBM
General Description
The AOD434 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 1.8V while
retaining a 12V V
GS(MAX)
rating. It is ESD protected to
a 2KV HBM rating. Standard Product AOD434 is Pb-
free (meets ROHS & Sony 259 specifications).
AOD434L is a Green Product ordering option.
AOD434 and AOD434L are electrically identical.
G D S
TO-252
D-PAK
Top View
Drain Connected to
Tab
G
D
S
Alpha & Omega Semiconductor, Ltd.