Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol Typ Max
16.7 25
40 50
R
θJL
1.9 2.5
°C
V
V±20
30
A
-18
40
60
Gate-Source Voltage
Drain-Source Voltage -30
Pulsed Drain Current
-18
-18
-40
Avalanche Current
C
Continuous Drain
Current
B,G
Maximum UnitsParameter
T
A
=25°C
G
T
A
=100°C
G
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
I
D
P
DSM
2.5
A
Repetitive avalanche energy L=0.1mH
C
mJ
Power Dissipation
B
T
C
=25°C
P
D
W
T
C
=100°C
Maximum Junction-to-Ambient
A
Steady-State
°C/W
W
T
A
=70°C 1.6
Junction and Storage Temperature Range -55 to 175
Power Dissipation
A
T
A
=25°C
Maximum Junction-to-Case
C
Steady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
°C/W
AOD405, AOD405L (Green Product)
P-Channel Enhancement Mode Field Effect Transistor
Rev 3: Sept 2004
Features
V
DS
(V) = -30V
I
D
= -18A
R
DS(ON)
< 32mΩ (V
GS
= -10V)
R
DS(ON)
< 60mΩ (V
GS
= -4.5V)
General Description
The AOD405 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and low
gate resistance. With the excellent thermal resistance
of the DPAK package, this device is well suited for
high current load applications. AOD405L (Green
Product) is offered in a lead-free package.
G D S
TO-252
D-PAK
Top View
Drain Connected to
Tab
G
D
S
Alpha & Omega Semiconductor, Ltd.