Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol Typ Max
360 415
400 460
R
θJL
300 350
W
Maximum Junction-to-Lead
C
Steady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
°C/W
Maximum Junction-to-Ambient
A
Steady-State
°C/W
±8Gate-Source Voltage
Drain-Source Voltage -20
Continuous Drain
Current
A
Maximum UnitsParameter
T
A
=25°C
T
A
=70°C
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
V
V
-0.48
-3Pulsed Drain Current
B
Power Dissipation
A
T
A
=25°C
Junction and Storage Temperature Range
A
P
D
°C
0.3
0.19
-55 to 150
T
A
=70°C
I
D
-0.6
AO7801
Dual P-Channel Enhancement Mode Field Effect Transistor
Rev 3: June 2005
Features
V
DS
(V) = -20V
I
D
= -0.6A (VGS = -4.5V)
R
DS(ON)
< 520mΩ (V
GS
= -4.5V)
R
DS(ON)
< 700mΩ (V
GS
= -2.5V)
R
DS(ON)
< 950mΩ (V
GS
= -1.8V)
General Description
The AO7801 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge, and
operation with gate voltages as low as 1.8V, in the
small SOT323 footprint. It can be used for a wide
variety of applications, including load switching, low
current inverters and low current DC-DC converters.
It is ESD protected to 2KV HBM. Standard Product
AO7801 is Pb-free (meets ROHS & Sony 259
specifications). AO7801L is a Green Product
ordering option. AO7801 and AO7801L are
electrically identical.
SC-70-6
(SOT-323)
Top View
D1
S1
G1
D2
S2
G2
S2D2
G2
D1
G1
S1
Alpha & Omega Semiconductor, Ltd.