Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol Typ Max
31 40
59 75
R
θJL
16 24
Junction and Storage Temperature Range
A
P
D
°C
3
2.1
-55 to 150
T
A
=70°C
I
D
-6.1
-5.1
-60Pulsed Drain Current
B
Power Dissipation
A
T
A
=25°C
Continuous Drain
Current
A
Maximum UnitsParameter
T
A
=25°C
T
A
=70°C
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
V
V±12Gate-Source Voltage
Drain-Source Voltage -30
°C/W
Maximum Junction-to-Ambient
A
Steady-State
°C/W
W
Maximum Junction-to-Lead
C
Steady-State
°C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
AO4403
P-Channel Enhancement Mode Field Effect Transistor
December 2001
Features
V
DS
(V) = -30V
I
D
= -6.1 A
R
DS(ON)
< 46mΩ (V
GS
= -10V)
R
DS(ON)
< 61mΩ (V
GS
= -4.5V)
R
DS(ON)
< 117mΩ (V
GS
= -2.5V)
General Description
The AO4403 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications. The source leads are separated to allow
a Kelvin connection to the source, which may be
used to bypass the source inductance.
SOIC-8
Top View
G
D
S
G
S
S
S
D
D
D
D
Alpha & Omega Semiconductor, Ltd.