November 27, 1996
S-BAND RADAR APPLICATIONS
RF & MICROWAVE TRANSISTORS
.310 x .310 2LFL (S064)
hermetically sealed
.REFRACTORY/GOLD METALLIZATION
.EMITTER SITE BALLASTED
.RUGGEDIZED VSWR 3:1 @ 1dB
OVERDRIVE
.LOW THERMAL RESISTANCE
.INPUT/OUTPUT MATCHING
.OVERLAY GEOMETRY
.METAL/CERAMIC HERMETIC PACKAGE
.POUT = 50 W MIN. WITH 5.2 dB GAIN
DESCRIPTION
The AM83135-050 device is a high power silicon
bipolar NPN transistor specifically designed for S-
Band radar pulsed output and driver applications.
This device is characterized at 10 µsec pulsewidth
and 10% duty cycle, but is capable of operation
over a range of pulse widths, duty cycles and tem-
peratures and can withstand a 3:1 output VSWR
with a +1 dB input overdrive. Low RF thermal re-
sistance, refractory/gold metallization, and com-
puterized automatic wire bonding techniques en-
sure high reliability and product consistency (in-
cluding phase characteristics).
The AM83135-050 is supplied in the IMPAC Her-
metic Metal/Ceramic package with internal In-
put/Output impedance matching circuitry, and is
intended for military and other high reliability ap-
plications.
PIN CONNECTION
BRANDING
83135-50
ORDER CODE
AM83135-050
ABSOLUTE MAXIMUM RATINGS (T
case
= 25
°
C)
R
TH(j-c)
Junction-Case Thermal Resistance* 0.40 °C/W
*Applies only to rated RF amplifier operation
AM83135-050
1. Collector 3. Emitter
2. Base 4. Base
THERMAL DATA
Symbol Parameter Value Unit
PDISS Power Dissipation* (T
C ≤ 125°C)
312 W
I
C
Device Current* 8.0 A
V
CC
Collector-Supply Voltage* 48 V
T
J
Junction Temperature (Pulsed RF Operation) 250 °C
T
STG
Storage Temperature
− 65 to +200
°
C
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