V2.00
Switched Low Noise Amplifier, 800-1000 MHz AM55-0016
M/A-COM Division of AMP Incorporated a73 North America: Tel. (800) 366-2266, Fax (800) 618-8883 a73 Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
a73 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
* If specific reel size is required, consult factory for part number.
Ordering Information
Part Number Package
AM55-0016 MSOP 8-Lead Plastic Package
AM55-0016TR Forward Tape and Reel*
AM55-0016RTR Reverse Tape and Reel*
AM55-0016SMB Designer’s Kit
MSOP-8
Features
• High Gain State:
- Gain: 16dB, Noise Figure: 1.6dB
- Input IP3: +3dBm (@2.7V, 25mA)
• Low Gain State:
- Insertion Loss: 5dB, Input IP3: +24dBm
• Single Supply: +2.7 to +5 VDC
• Low Cost MSOP-8 Plastic Package
• Adjustable current: 10 to 30 mA with external resistor
Description
M/A-COM’s AM55-0016 is a high dynamic range, switchable
low noise amplifier in a low cost, MSOP 8-lead, surface mount,
plastic package. The design utilizes a patented switching
technique to provide a low insertion loss, high input IP
3
bypass
state in parallel with the high gain, low noise state. The LNA
employs external input matching to obtain optimum noise figure
performance and operating frequency flexibility. The
AM55-0016 also features flexible biasing to control the current
consumption vs. dynamic range trade-off. Its current can be
controlled over a range of 10 mA to 30 mA with an external
resistor.
Typical applications include receiver front ends in cellular band
CDMA handsets. It is also useful as a switched gain block, buffer
or driver in portable cellular systems.
The AM55-0016 is fabricated using a low-cost 0.5-micron gate
length GaAs MESFET process. The process features full
passivation for increased performance and reliability.
Switched Low Noise Amplifier
800 - 1000 MHz
AM55-0016
-B-
ID PIN
0.193
010R
0 118
.020
020
0.0256
0 118
12°4X
0 034 0 040
0 008
0 013
12°4X
0.007 0 0215
3°
RF
IN
RF
OUT
Functional Block Diagram
Electrical Specifications
1
T
A
= +25°C, Z
0
=50Ω, F=881 MHz, P
IN
= -30 dBm, V
DD
=2.7 V, I
DD
=10 mA
Parameter Test Conditions Units Min. Typ. Max.
HIGH GAIN STATE, Voltage control = 2.7 volts
Gain dB — 16 —
Noise Figure dB — 1.6 1.8
Input IP3 I
DD
= 10 mA, V
DD
= 2.7V
I
DD
= 25 mA, V
DD
= 2.7V
dBm
dBm
—
—
-2
+3
—
—
Input VSWR / Output VSWR — — 2.0:1
Reverse Isolation dB — 32 —
LOW GAIN STATE, Voltage control = 0 volts
Insertion Loss I
DD
= 100 µA dB — 5 —
Input IP3 dBm — +24 —
Input VSWR — — 2.3:1 —
Output VSWR — — 2.0:1 —
1. Refer to Typical Performance Data for performance versus frequency and bias.