Specifications Subject to Change Without Notice.
M/A-COM Inc. 1
North America: Tel. (800) 366-2266 ♦ Asia/Pacific: Tel. +81 3 3226-8761 ♦ Europe: Tel. +44 (1344) 869-595
Fax (800) 618-8883 Fax +81 3 3226-8769 Fax +44 (1344) 300 020
Preliminary Release
1.2 W High Efficiency Power Amplifier
800 - 960 MHz
AM52-0001
V1.00
Features
• SOIC-8 Thermally Efficient Plastic Package
• +30.8 dBm Typical Power Out
• Greater than 50% Typical Power Added Efficiency
• 21 dB typical Power Gain
• Flexible External Output Matching
Description
M/A-COM’s AM52-0001 is a GaAs power amplifier in a thermally
efficient low cost SOIC-8 plastic package. The AM52-0001 is
designed for high efficiency 1.2 W output power and 21 dB of
associated gain in the 800-960 MHz frequency band. The
AM52-0001 is unconditionally stable in both small and large signal
operation. It features flexible biasing for improved dynamic range
and off-chip matching for improved efficiency and flexibility.
The AM52-0001 is specifically designed for high efficiency final
output power amplification in FM, GFSK and FSK type systems,
such as AMPS, ETACS, NTACS, CT1, CDPD and ISM.
M/A-COM's AM52-0001 is fabricated using a mature 0.5 micron
gate length GaAs MESFET power process. The process features
full passivation for increased performance and reliability. The
AM52-0001 can be used with standard automated SMT assembly
equipment (See M/A-COM application note M558).
SOIC-8P
.004 (.10)
.050 (1.27)
MSM BAC.010 (.25)
-A-
-C-
-B-
.010(.25) B
CH AMF E R
.1497/.1574
(3.80/4.00)
.2284/.2440
(5.80/6.20)
.1890/.1968
(4.80/5.00)
.013/.020 (8 PL)
(.33/.51)
.0532/.0688
(1.35/1.75)
MM
Ordering Information
Part Number Package
AM52-0001 SOIC-8 Lead Plastic
AM52-0001TR Forward Tape and Reel *
AM52-0001SMB Designer’s Kit
* If specific reel size is required, consult factory for part number
assignment.
Electrical Specifications: V
D1
= V
D2
= 4.8V ± 5%, T
A
= +25°C, Freq. = 824-849 MHz, V
GG
= V
G2
= V
G1
adjusted for 150 mA quiescent
drain Current.
Parameter Test Conditions Units Min. Typ. Max.
Linear Gain Pin ≤ -20 dBm dB 29
Output Power Pin = 10 dBm dBm 30.8
Power Gain dB 21
Power Added Efficiency % 55
Second Harmonic dBc -30
Third Harmonic dBc -50
Noise Power
1
dBm -92
Stability
2
VSWR 10:1
Load Mismatch
3
VSWR 10:1
Gate Current mA 5
Adjustable Power Control (APC) V
D1
= 0 → 4.8V V
D2
= 4.8 V dB 27
1. Noise power (30 KHz RBW), 45 MHz above T
X
Freq range, measured under rated output power conditions.
2. Parasitic Oscillation defined as any spurious output less than 60 dBc with respect to desired signal level. Measured with nominal Pin and an output
VSWR of 10:1 any phase, V
DD
= 4.8 V.
3. No permanent degradation with nominal Pin and an output VSWR of 10:1 at any phase (360° rotation in 10 sec.) with V
DD
up to 6V. .