SUPPLEMENT
1/13/98 Publication# 21257 Rev: B Amendment/0
Issue Date: December 1997
Am29F200A Known Good Die
2 Megabit (256 K x 8-Bit/128 K x 16-Bit)
CMOS 5.0 Volt-only, Sectored Flash Memory—Die Revision 1
DISTINCTIVE CHARACTERISTICS
a73 5.0 V ± 10% for read and write operations
— Minimizes system level power requirements
a73 High performance
— 90 or 120 ns access time
a73 Low power consumption
— 20 mA typical active read current (byte mode)
— 28 mA typical active read current for
(word mode)
— 30 mA typical program/erase current
—1 µA typical standby current
a73 Sector erase architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
three 64 Kbyte sectors (byte mode)
— One 8 Kword, two 4 Kword, one 16 Kword, and
three 32 Kword sectors (word mode)
— Supports full chip erase
— Sector Protection features:
A hardware method of locking a sector to
prevent any program or erase operations within
that sector
Sectors can be locked via programming
equipment
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
a73 Top or bottom boot block configurations
available
a73 Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
a73 Minimum 100,000 write/erase cycles guaranteed
a73 Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply flash
— Superior inadvertent write protection
a73 Data# Polling and Toggle Bit
— Detects program or erase cycle completion
a73 Ready/Busy# output (RY/BY#)
— Hardware method for detection of program or
erase cycle completion
a73 Erase Suspend/Resume
— Supports reading data from a sector not being
erased
a73 Hardware RESET# pin
— Resets internal state machine to the reading
array data
a73 Tested to datasheet specifications at
temperature
a73 Quality and reliability levels equivalent to
standard packaged components