SUPPLEMENT
2/17/98 Publication# 21551 Rev: A Amendment/+1
Issue Date: February 1998
Am29F016B Known Good Die
16 Megabit (2 M x 8-Bit)
CMOS 5.0 Volt-only, Sector Erase Flash Memory—Die Revision 1
DISTINCTIVE CHARACTERISTICS
a73 5.0 V ± 10%, single power supply operation
— Minimizes system level power requirements
a73 Manufactured on 0.35 µm process technology
a73 High performance
— 120 ns access time
a73 Low power consumption
— 25 mA typical active read current
— 30 mA typical program/erase current
—<1 µA typical standby current (standard access
time to active mode)
a73 Flexible sector architecture
— 32 uniform sectors of 64 Kbytes each
— Any combination of sectors can be erased.
— Supports full chip erase
— Group sector protection:
A hardware method of locking sector groups to
prevent any program or erase operations within
that sector group
Temporary Sector Group Unprotect allows code
changes in previously locked sectors
a73 Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies bytes at specified addresses
a73 Minimum 100,000 write/erase cycles guaranteed
a73 Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply Flash standard
— Superior inadvertent write protection
a73 Data# Polling and toggle bits
— Provides a software method of detecting
program or erase cycle completion
a73 Ready/Busy output (RY/BY#)
— Provides a hardware method for detecting
program or erase cycle completion
a73 Erase Suspend/Resume
— Suspends a sector erase operation to read data
from, or program data to, a non-erasing sector,
then resumes the erase operation
a73 Hardware reset pin (RESET#)
— Resets internal state machine to the read mode
a73 Tested to datasheet specifications at
temperature
a73 Quality and reliability levels equivalent to
standard packaged components