AM29F010-1
器件描述:1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory-Die Revision 1
文件大小:56.33KB,共8页
Sponsor by e络盟
器件资料摘要:
SUPPLEMENT
1/13/98 Publication# 21116 Rev: B Amendment/0
Issue Date: January 1998
Am29F010 Known Good Die
1 Megabit (128 K x 8-Bit)
CMOS 5.0 Volt-only, Uniform Sector Flash Memory—Die Revision 1
DISTINCTIVE CHARACTERISTICS
a73 Single power supply operation
— 5.0 V ± 10% for read, erase, and program
operations
— Simplifies system-level power requirements
a73 High performance
— 90 or 120 ns maximum access time
a73 Low power consumption
— 30 mA max active read current
— 50 mA max program/erase current
—<25 µA typical standby current
a73 Flexible sector architecture
— Eight uniform sectors
— Any combination of sectors can be erased
— Supports full chip erase
a73 Sector protection
— Hardware-based feature that disables/re-
enables program and erase operations in any
combination of sectors
— Sector protection/unprotection can be
implemented using standard PROM
programming equipment
a73 Embedded Algorithms
— Embedded Erase algorithm automatically
pre-programs and erases the chip or any
combination of designated sector
— Embedded Program algorithm automatically
programs and verifies data at specified address
a73 Minimum 100,000 program/erase cycles
guaranteed
a73 Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply flash
— Superior inadvertent write protection
a73 Data Polling and Toggle Bits
— Provides a software method of detecting
program or erase cycle completion
a73 Tested to datasheet specifications at
temperature
a73 Quality and reliability levels equivalent to
standard packaged components