August 1992
S-BAND RADAR APPLICATIONS
RF & MICROWAVE TRANSISTORS
.400 x .500 2L SFL (S138)
hermetically sealed
.REFRACTORY/GOLD METALLIZATION
.EMITTER SITE BALLASTED
.3:1 VSWR CAPABILITY
.LOW THERMAL RESISTANCE
.INPUT/OUTPUT MATCHING
.OVERLAY GEOMETRY
.METAL/CERAMIC HERMETIC PACKAGE
.POUT =105 W MIN. WITH 6.2 dB GAIN
DESCRIPTION
The AM2931-110 is a high power silicon bipolar
NPN transistor specifically designed for S-Band
radar pulsed output and driver applications.
This device is capable of operation over a wide
range of pulse widths, duty cycles and tempera-
tures and can withstand a 3:1 output VSWR. Low
RF thermal resistance, refractory/gold metalliza-
tion, and computerized automatic wire bonding
techniques ensure high reliability and product con-
sistency (including phase characteristics).
The AM2931-110 is supplied in the BIGPAC Her-
metic Metal/Ceramic package with internal
Input/Output matching circuitry, and is intended
for military and other high reliability applications.
PIN CONNECTION
BRANDING
2931-110
ORDER CODE
AM2931-110
ABSOLUTE MAXIMUM RATINGS (T
case
= 25
°
C)
Symbol Parameter Value Unit
P
DISS
Power Dissipation* (T
C
≤ 100°C) 375 W
IC Device Current* 12 A
VCC Collector-Supply Voltage* 48 V
T
J
Junction Temperature (Pulsed RF Operation) 250
°
C
T
STG
Storage Temperature − 65 to +200
°
C
R
TH(j-c)
Junction-Case Thermal Resistance* 0.40 °C/W
*Applies only to rated RF amplifier operation
AM2931-110
1. Collector 3. Emitter
2. Base 4. Base
THERMAL DATA
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