RF & MICROWAVE TRANSISTORS
S-BAND RADAR APPLICATIONS
.400 x .500 2LFL (S038)
hermetically sealed
.REFRACTORY/GOLD METALLIZATION
.EMITTER SITE BALLASTED
.LOW THERMAL RESISTANCE
.INPUT/OUTPUT MATCHING
.OVERLAY GEOMETRY
.METAL/CERAMIC HERMETIC PACKAGE
.POUT = 125 W MIN. WITH 7.0 dB GAIN
DESCRIPTION
The AM2729-125 device is a high power silicon
bipolar NPN transistor specifically designed for
medium pulse S-Band radar output and driver
applications.
This device is characterized at 50 µsec pulse
width and 10% duty cycle, but is capable of op-
eration over a range of pulse widths, duty cycles
and temperatures. Low RF thermal resistance,
refractory/gold metallization and computerized
automatic wire bonding techniques ensure high
reliability and product consistency (including
phase characteristics).
The AM2729-125 is supplied in the BIGPAC
Hermetic Metal/Ceramic package with internal In-
put/Output impedance matching circuitry, and is
intended for military and other high reliability ap-
plications.
PIN CONNECTION
BRANDING
2729-125
ORDER CODE
AM2729-125
ABSOLUTE MAXIMUM RATINGS (T
case
= 25
°
C)
Symbol Parameter Value Unit
PDISS Power Dissipation* (T
C ≤ 75°C)
500 W
IC Device Current* 16 A
VCC Collector-Supply Voltage* 45 V
TJ Junction Temperature (Pulsed RF Operation) 250 °C
TSTG Storage Temperature − 65 to +200 °C
RTH(j-c) Junction-Case Thermal Resistance* 0.35 °C/W
*Applies only to rated RF amplifier operation
AM2729-125
1. Collector 3. Emitter
2. Base 4. Base
THERMAL DATA