1/8May 2000
AM1517-025
RF & MICROWAVE TRANSISTORS
SATELLITE COMMUNICATIONS APPLICATIONS
SO42
hermetically sealed
ORDER CODE
AM1517-025
BRANDING
1517-25
• REFRACTORY/GOLD METALLIZATION
• EMITTER SITE BALLASTED
• ∞:1 VSWR CAPABILITY
• LOW THERMAL RESISTANCE
• INPUT/OUTPUT MATCHING
• OVERLAY GEOMETRY
• METALLIC/CERAMIC HERMETIC PACKAGE
• P
OUT
= 25 W MIN. WITH 8.5 dB GAIN
DESCRIPTION
The AM1517-025 power transistor is designed
specifically for Satellite communications applica-
tions in the 1.5 - 1.7 frequency range.
The device is capable of withstanding any mis-
match load condition at any phase angle (VSWR
∞:1) under full rated conditions. The unit is an
overlay, emitter site ballasted, geometry utilizing a
refractory/Gold metallization system.
The AM1517-025 is supplied in the AMPAC
TM
Hermetic/Ceramic package with internal Input/
Output matching structures.
PIN CONNECTION
1
4
3
2
1. Collector
2. Base
3. Emitter
4. Base
ABSOLUTE MAXIMUM RATINGS(T
CASE
=25
0
C)
Symbol Parameter Value Unit
P
DISS
Power Dissipation* ( Tc≤ 50
0
C)
45 W
I
C Device Current* 2.5 A
V
CC
Collector-Supply Voltage* 30 V
T
j Junction Temperature 200 0
C
T
STG
Storage Temperature -65 to +200 0
C
THERMAL DATA
R
th(j-c) Junction-Case Thermal Resistance* 3.3
0
C/W
* Applies only to rated RF amplifier operation