September 1992
L-BAND RADAR APPLICATIONS
RF & MICROWAVE TRANSISTORS
.400 x .500 2LFL (S038)
hermetically sealed
.REFRACTORY/GOLD METALLIZATION
.EMITTER SITE BALLASTED
.5:1 VSWR CAPABILITY
.LOW THERMAL RESISTANCE
.INPUT/OUTPUT MATCHING
.OVERLAY GEOMETRY
.METAL/CERAMIC HERMETIC PACKAGE
.POUT = 270 W MIN. WITH 6.3 dB GAIN
DESCRIPTION
The AM1214-300 device is a high power transistor
specifically designed for L-Band radar pulsed out-
put and driver applications.
This device is designed for operation under moder-
ate pulse width and duty cycle pulse conditions
and is capable of withstanding 5:1 output VSWR
at rated RF conditions. Low RF thermal resistance
and computerized automatic wire bonding tech-
niques ensure high reliability and product consist-
ency.
The AM1214-300 is supplied in the BIGPAC Her-
metic Metal/Ceramic package with internal
Input/Output matching structures.
PIN CONNECTION
BRANDING
1214-300
ORDER CODE
AM1214-300
ABSOLUTE MAXIMUM RATINGS (T
case
= 25
°
C)
Symbol Parameter Value Unit
P
DISS
Power Dissipation* (T
C
≤ 100°C) 730 W
IC Device Current* 18.75 A
VCC Collector-Supply Voltage* 55 V
T
J
Junction Temperature (Pulsed RF Operation) 250
°
C
T
STG
Storage Temperature − 65 to +200
°
C
RTH(j-c) Junction-Case Thermal Resistance* 0.24
°
C/W
*Applies only to rated RF amplifier operation
AM1214-300
1. Collector 3. Emitter
2. Base 4. Base
THERMAL DATA
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