September 1992
AVIONICS APPLICATIONS
RF & MICROWAVE TRANSISTORS
.400 x .400 2NLFL (S042)
hermetically sealed
.REFRACTORY/GOLD METALLIZATION
.EMITTER SITE BALLASTED
.LOW THERMAL RESISTANCE
.INPUT/OUTPUT MATCHING
.OVERLAY GEOMETRY
.METAL/CERAMIC HERMETIC PACKAGE
.POUT = 90 W MIN. WITH 13 dB GAIN
.BANDWIDTH 225 MHz
DESCRIPTION
The AM0912-080 Avionics power transistor is a
broadband, high peak pulse power device speci-
fically designed for avionics applications requiring
broad bandwidth with moderate duty cycle and
pulse width constraints such as ground/ship based
DME/TACAN.
This device is also designed for specialized ap-
plications including JTIDS where reduced power
provided under pulse formats utilizing short pulse
widths and high burst or overall duty cycles.
The AM0912-080 is housed in the unique
AMPAC™ Hermetic Metal/Ceramic package with
internal Input/Output matching structures.
PIN CONNECTION
BRANDING
0912-80
ORDER CODE
AM0912-080
ABSOLUTE MAXIMUM RATINGS (T
case
= 25
°
C)
Symbol Parameter Value Unit
PDISS Power Dissipation* (TC ≤100˚C) 220 W
IC Device Current* 7.0 A
VCC Collector-Supply Voltage* 50 V
TJ Junction Temperature (Pulsed RF Operation) 250
°
C
TSTG Storage Temperature − 65 to +200
°
C
RTH(j-c) Junction-Case Thermal Resistance* 0.80
°
C/W
*Applies only to rated RF amplifier operation
AM0912-080
1. Collector 3. Emitter
2. Base 4. Base
THERMAL DATA
1/3