PRELIMINARY DATA
August 1992
AVIONICS APPLICATIONS
RF & MICROWAVE TRANSISTORS
.400 x .400 2NLFL (S042)
hermetically sealed
.REFRACTORY/GOLD METALLIZATION
.INTERNAL INPUT MATCHING
.METAL/CERAMIC HERMETIC PACKAGE
.POUT = 220 W MIN. WITH 8.7 dB GAIN
DESCRIPTION
The AM0608-200 is an internally-matched, com-
mon base silicon bipolar device optimized pulsed
application in the 600 - 750 MHz frequency range.
Housed in the industry-standard AMPAC™ met-
al/ceramic package, this device uses a refrac-
tory/gold overlay die geometry for ruggedness and
long-term reliability.
PIN CONNECTION
BRANDING
0608-200
ORDER CODE
AM0608-200
ABSOLUTE MAXIMUM RATINGS (T
case
= 25
°
C)
Symbol Parameter Value Unit
PDISS Power Dissipation* (TC ≤ 75˚C) 875 W
IC Device Current* 16.0 A
VCC Collector-Supply Voltage* 55 V
TJ Junction Temperature (Pulsed RF Operation) 250
°
C
TSTG Storage Temperature − 65 to +200
°
C
RTH(j-c) Junction-Case Thermal Resistance* 0.20
°
C/W
*Applies only to rated RF amplifier operation
AM0608-200
1. Collector 3. Emitter
2. Base 4. Base
THERMAL DATA
1/3