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AM038R1-00

器件描述:33-43 GHz GaAs MMIC Image Rejection Balanced Mixer
器件厂商:ALPHA [Alpha Industries]
文件大小:123.18KB,共2页
Sponsor by e络盟
器件资料摘要:
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com 1
Specifications subject to change without notice. 2/00A
33–43 GHz GaAs MMIC
Image Rejection Balanced Mixer
Features
a73 Low Conversion Loss, 9 dB
a73 Low LO Power Requirement, 8 dBm
a73 Image Rejection, 18 dB
a73 No DC Bias Required
a73 Requires External IF 90° Hybrid
Description
Alpha’s image rejection balanced GaAs Schottky diode
mixer has a typical conversion loss of 9 dB at an LO power
level as low as 8 dBm over the band 33–43 GHz. An
external 90° IF hybrid is required to combine the IF
1
and
IF
2
signals at the desired IF frequency. The chip uses
Alpha’s proven Schottky diode technology, and is based
upon MBE layers for the highest uniformity and
repeatability. The diodes employ surface passivation to
ensure a rugged, reliable part with through-substrate via
holes and gold-based backside metallization to facilitate
an epoxy die attach process. All chips are screened for
DC diode parameters and lot samples are RF measured
to guarantee performance. This device is recommended
for applications requiring down conversion.
Dimensions indicated in mm.
All pads are ≥ 0.07 mm wide.
Chip thickness = 0.1 mm.
Chip Outline
Parameter Symbol Min. Typ.
2
Max. Unit
RF and LO Frequency Range F
RF
, F
LO
33–43 GHz
IF Frequency Range F
IF
0–3 GHz
LO Power Level P
LO
8–14 dBm
Conversion Loss
1
L
C
9dB
Image Rejection
1
IR 18 dB
RF and LO Return Loss
1
RL
RF
, RL
LO
12 dB
LO to RF Isolation
1
ISO
LO-RF
12 dB
LO to IF Isolation
1
ISO
LO-IF
23 dB
RF Input 1 dB Compression Point
1
P
1 dB
7 dBm
Individual Diode Series Resistance R
S
3.0 Ω
Electrical Specifications at 25°C
1
50 OHMS 50 OHMS
OHMIC ADDED 9-4-92OHMIC ADDED 9-4-92
OHMIC ADDED 9-4-92OHMIC ADDED 9-4-92
0.000
0.000
1.785
0.890
2.010
1.258
0.085
0.489
0.890
0.191 0.983 1.133 1.925
0.985 1.131
Absolute Maximum Ratings
Characteristic Value
Operating Temperature -55°C to +125°C
Storage Temperature -65°C to +150°C
Total Input Power (RF + LO) 23 dBm
AM038R1-00
1. Not measured on a 100% basis.
2. Typical represents the median parameter value across the specified
frequency range for the median chip.