Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com 1
Specifications subject to change without notice. 2/00A
32–37 GHz GaAs MMIC
Ring Hybrid Mixer
Features
a73 Low Conversion Loss, 6.0 dB
a73 Low LO Power Requirement, 9 dBm
a73 High LO to RF Isolation, 28 dB
a73 No DC Bias Required
Description
Alpha’s ring hybrid GaAs Schottky diode mixer has a
typical conversion loss of 6.0 dB at an LO power level as
low as 9 dBm over the band 32–37 GHz. The chip uses
Alpha’s proven Schottky diode technology, and is based
upon MBE layers for the highest uniformity and
repeatability. The diodes employ surface passivation to
ensure a rugged, reliable part with through-substrate via
holes and gold-based backside metallization to facilitate
an epoxy die attach process. All chips are screened for
DC diode parameters and lot samples are RF measured
to guarantee performance.
Dimensions indicated in mm.
All pads are ≥ 0.07 mm wide.
Chip thickness = 0.1 mm.
Chip Outline
Parameter Symbol Min. Typ.
2
Max. Unit
RF and LO Frequency Range F
RF
, F
LO
32–37 GHz
IF Frequency Range F
IF
0–3 GHz
LO Power Level P
LO
9–19 dBm
Conversion Loss
1
L
C
6dB
RF and LO Return Loss
1
RL
RF
, RL
LO
9d
LO to RF Isolation
1
ISO
LO-RF
28 dB
LO to IF Isolation
1
ISO
LO-IF
35 dB
RF Input 1 dB Compression Point
1
P
1 dB
10 dBm
Individual Diode Series Resistance R
S
4.0 Ω
Electrical Specifications at 25°C
0.000
0.000
0.541
2.800
2.027
2.471
3.195
Absolute Maximum Ratings
Characteristic Value
Operating Temperature -55°C to +125°C
Storage Temperature -65°C to +150°C
Total Input Power (RF + LO) 20 dBm
AM035N5-00
1. Not measured on a 100% basis.
2. Typical represents the median parameter value across the specified
frequency range for the median chip.