AM028S1-00
器件描述:26-33 GHz GaAs MMIC Single Balanced Down Converter Mixer
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Sponsor by e络盟
器件资料摘要:
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com 1
Specifications subject to change without notice. 2/00A
26–33 GHz GaAs MMIC Single
Balanced Down Converter Mixer
Features
a73 Low Conversion Loss, 6.0 dB
a73 Low LO Power Requirement, 8 dBm
a73 Wide IF Bandwidth, 0–5 GHz
a73 No DC Bias Required
Description
Alpha’s single balanced GaAs Schottky diode mixer has
a typical conversion loss of 6.0 dB at an LO power level
as low as 8 dBm over the band 26–33 GHz.The chip uses
Alpha’s proven Schottky diode technology, and is based
upon MBE layers for the highest uniformity and
repeatability. The diodes employ surface passivation to
ensure a rugged, reliable part with through-substrate via
holes and gold-based backside metallization to facilitate
an epoxy die attach process. All chips are screened for
DC diode parameters and lot samples are RF measured
to guarantee performance.
Dimensions indicated in mm.
All pads are ≥ 0.07 mm wide.
Chip thickness = 0.1 mm.
Chip Outline
Parameter Symbol Min. Typ.
2
Max. Unit
RF and LO Frequency Range F
RF
, F
LO
26–33 GHz
IF Frequency Range F
IF
0–5 GHz
LO Power Level P
LO
8–18 dBm
Conversion Loss
1
L
C
6dB
RF and LO Return Loss
1
RL
RF
, RL
LO
20 dB
LO to RF Isolation
1
ISO
LO-RF
12 dB
LO to IF Isolation
1
ISO
LO-IF
35 dB
RF Input 1 dB Compression Point
1
P
1 dB
10 dBm
Individual Diode Series Resistance R
S
3.3 Ω
Electrical Specifications at 25°C
OHMIC ADDED 9-4-92OHMIC ADDED 9-4-92
OHMIC ADDED 9-4-92
0.000
0.000
0.780 1.760
1.740
1.426 1.407
Absolute Maximum Ratings
Characteristic Value
Operating Temperature -55°C to +125°C
Storage Temperature -65°C to +150°C
Total Input Power (RF + LO) 20 dBm
AM028S1-00
1. Not measured on a 100% basis.
2. Typical represents the median parameter value across the specified
frequency range for the median chip.