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厂商索引:A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-S-T-U-V-W-X-Y-Z

ALR325

器件描述:NPN SILICON RF POWER TRANSISTOR
器件厂商:ASI [Advanced Semiconductor]
文件大小:17.67KB,共1页
Sponsor by e络盟
器件资料摘要:
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982 - 1200 • FAX (818) 765 - 3004 1/1
Specifications are subject to change without notice.

CHARACTERISTICS T C = 25 O C

SYMBOL NONE TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV CBO I C = 50 mA 65 V
BV CES I C = 50 mA 65 V
BV EBO I E = 15 mA 3.0 V
I CES V CE = 50 V 30 mA
h FE V CE = 5.0 V I C = 5.0 A 10 --- ---
P
G
ηC
V CC = 45 V P OUT = 325 W f = 1.2 to 1.4
GHz
6.5
38
dB
%

NPN SILICON RF POWER TRANSISTOR
ALR325
DESCRIPTION:
The ASI ALR325 is Designed for

FEATURES:
• Input Matching Network

• Omnigold ™ Metalization System
MAXIMUM RATINGS
I C 18.75 A
V CC 55 V
P DISS 730 W @ T C = 25 O C
T J - 65 O C to +250 O C
T STG - 65 O C to +200 O C
θJC 0.10 O C/W
PACKAGE ST YLE .400 2L FLG(A)


















ORDER CODE: ASI10516
MINIMUM
inches / mm
.100 / 2.54
.376 / 9.55
.050 / 1.27
.110 / 2.79
B
C
D
E
F
G
A
MAXIMUM
.120 / 3.05
.130 / 3.30
.396 / 10.06
inches / mm

.193 / 4.90
H
DIM
K
L
I
J
.490 / 12.45
.690 / 17.53
.003 / 0.08
.510 / 12.95
.710 / 18.03
.006 / 0.18
N
M
.118 / 3.00 .131 / 3.33
.135 / 3.43 .145 / 3.68
.072 / 1.83.052 / 1.32
P .230 / 5.84
G
C
N
2xR
4x .062 x 45°
I
E
P
M
F
L
H
J
K
2xB
D
.040 x 45°A
.100 / 2.54
.395 / 10.03 .407 / 10.34
.890 / 22.61 .910 / 23.11