ALD1101
器件描述：DUAL N-CHANNEL MATCHED MOSFET PAIR
器件厂商：ALD [Advanced Linear Devices]
文件大小：29.84KB，共4页
Sponsor by e络盟器件资料摘要：
GENERAL DESCRIPTION
The ALD1101 is a monolithic dual N-channel matched transistor pair
intended for a broad range of analog applications. These enhancement-
mode transistors are manufactured with Advanced Linear Devices' en-
hanced ACMOS silicon gate CMOS process.
The ALD1101 offers high input impedance and negative current tempera-
ture coefficient. The transistor pair is matched for minimum offset voltage
and differential thermal response, and it is designed for switching and
amplifying applications in +2V to +12V systems where low input bias
current, low input capacitance and fast switching speed are desired. Since
these are MOSFET devices, they feature very large (almost infinite)
current gain in a low frequency, or near DC, operating environment. When
used with an ALD1102, a dual CMOS analog switch can be constructed.
In addition, the ALD1101 is intended as a building block for differential
amplifier input stages, transmission gates, and multiplexer applications.
The ALD1101 is suitable for use in precision applications which require
very high current gain, beta, such as current mirrors and current sources.
The high input impedance and the high DC current gain of the Field Effect
Transistors result in extremely low current loss through the control gate.
The DC current gain is limited by the gate input leakage current, which is
specified at 50pA at room temperature. For example, DC beta of the device
at a drain current of 5mA at 25°C is = 5mA/50pA = 100,000,000.
ADVANCED
LINEAR
DEVICES, INC.
DUAL N-CHANNEL MATCHED MOSFET PAIR
ALD1101A/ALD1101B
ALD1101
APPLICATIONS
• Precision current mirrors
• Precision current sources
• Analog switches
• Choppers
• Differential amplifier
input stage
• Voltage comparator
• Data converters
• Sample and Hold
• Analog inverter
FEATURES
• Low threshold voltage of 0.7V
• Low input capacitance
• Low Vos grades -- 2mV, 5mV, 10mV
• High input impedance -- 10
12
Ω typical
• Negative current (I
DS
) temperature
coefficient
• Enhancement-mode (normally off)
• DC current gain 10
9
Operating Temperature Range*
-55°C to +125°C0°C to +70°C0°C to +70°C
8-Pin 8-Pin 8-Pin
CERDIP Plastic Dip SOIC
Package Package Package
ALD1101A PA
ALD1101B PA
ALD1101 DA ALD1101 PA ALD1101 SA
* Contact factory for industrial temperature range.
ORDERING INFORMATION
BLOCK DIAGRAM
SOURCE 1 (1)
SUBSTRATE (8)
SOURCE 2 (7)
GATE 2 (6)
DRAIN 1 (3)
GATE 1 (2)
DRAIN 2 (5)
PIN CONFIGURATION
1
2
3
4
8
7
6
5
SOURCE
1
GATE
1
DRAIN
1
NC
SUBSTRATE
SOURCE
2
GATE
2
DRAIN
2
TOP VIEW
DA, PA, SA PACKAGE
© 1998 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 http://www.aldinc.com
© 1998 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 http://www.aldinc.com
The ALD1101 is a monolithic dual N-channel matched transistor pair
intended for a broad range of analog applications. These enhancement-
mode transistors are manufactured with Advanced Linear Devices' en-
hanced ACMOS silicon gate CMOS process.
The ALD1101 offers high input impedance and negative current tempera-
ture coefficient. The transistor pair is matched for minimum offset voltage
and differential thermal response, and it is designed for switching and
amplifying applications in +2V to +12V systems where low input bias
current, low input capacitance and fast switching speed are desired. Since
these are MOSFET devices, they feature very large (almost infinite)
current gain in a low frequency, or near DC, operating environment. When
used with an ALD1102, a dual CMOS analog switch can be constructed.
In addition, the ALD1101 is intended as a building block for differential
amplifier input stages, transmission gates, and multiplexer applications.
The ALD1101 is suitable for use in precision applications which require
very high current gain, beta, such as current mirrors and current sources.
The high input impedance and the high DC current gain of the Field Effect
Transistors result in extremely low current loss through the control gate.
The DC current gain is limited by the gate input leakage current, which is
specified at 50pA at room temperature. For example, DC beta of the device
at a drain current of 5mA at 25°C is = 5mA/50pA = 100,000,000.
ADVANCED
LINEAR
DEVICES, INC.
DUAL N-CHANNEL MATCHED MOSFET PAIR
ALD1101A/ALD1101B
ALD1101
APPLICATIONS
• Precision current mirrors
• Precision current sources
• Analog switches
• Choppers
• Differential amplifier
input stage
• Voltage comparator
• Data converters
• Sample and Hold
• Analog inverter
FEATURES
• Low threshold voltage of 0.7V
• Low input capacitance
• Low Vos grades -- 2mV, 5mV, 10mV
• High input impedance -- 10
12
Ω typical
• Negative current (I
DS
) temperature
coefficient
• Enhancement-mode (normally off)
• DC current gain 10
9
Operating Temperature Range*
-55°C to +125°C0°C to +70°C0°C to +70°C
8-Pin 8-Pin 8-Pin
CERDIP Plastic Dip SOIC
Package Package Package
ALD1101A PA
ALD1101B PA
ALD1101 DA ALD1101 PA ALD1101 SA
* Contact factory for industrial temperature range.
ORDERING INFORMATION
BLOCK DIAGRAM
SOURCE 1 (1)
SUBSTRATE (8)
SOURCE 2 (7)
GATE 2 (6)
DRAIN 1 (3)
GATE 1 (2)
DRAIN 2 (5)
PIN CONFIGURATION
1
2
3
4
8
7
6
5
SOURCE
1
GATE
1
DRAIN
1
NC
SUBSTRATE
SOURCE
2
GATE
2
DRAIN
2
TOP VIEW
DA, PA, SA PACKAGE
© 1998 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 http://www.aldinc.com
© 1998 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 http://www.aldinc.com