A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982 - 1200 • F AX (818) 765 - 3004 1/1
Specifications are subject to change without notice.

CHARACTERISTICS T C = 25 O C

SYMBOL NONE TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV CBO I C = 10 mA 55 V
BV CER I C = 20 mA R BE = 10 Ω 55 V
BV EBO I E = 1.0 mA 3.5 V
I CES V CE = 35 V 5.0 mA
h FE V CE = 5.0 V I C = 1.0 A 15 150 ---
P
G
ηC
V CC = 50 V P OUT = 30 W f = 960 - 1215 MHz 7.8
40
dB
%

NPN SILICON RF POWER TRANSISTOR
AJT030
DESCRIPTION:
The ASI AJT030 is Designed for

FEATURES:
• Input Matching Network
•
• Omnigold ™ Metalization System
MAXIMUM RATINGS
I C 3.5 A
V CC 40 V
P DISS 75 W @ T C ≤ 85 O C
T J - 65 O C to +250 O C
T STG - 65 O C to + 200 O C
θJC 2.2 O C/W
PACKAGE STYLE .400 2L FLG


















ORDER CODE: ASI10546
MINIMUM
inches / mm
.395 / 10.03
.140 / 3.56

B
C
D
E
F
G
A
MAXIMUM
.230 / 5.84
.407 / 10.34
inches / mm
H .118 / 3.00 .131 / 3.33
DIM
K
L
I
J
.386 / 9.80
O
P
Q
R
N
M .450 / 11.43
.050 / 1.27
.110 / 2.80
.193 / 4.90
.003 / 0.08 .006 / 0.15
.900 / 22.86
.650 / 16.51
.063 / 1.60
.125 / 3.18
.170 / 4.32
.062 / 1.58
.405 / 10.29
.110 / 2.80
J
PG
M
C
B
D
HF
N
Q
I
O
K
E
Ø .120
A
.062 x 45°
R
L