BUL903ED
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
n INTEGRATED ANTISATURATION AND
PROTECTION NETWORK
n INTEGRATED ANTIPARALLEL COLLECTOR
EMITTER DIODE
n HIGH VOLTAGE CAPABILITY
n LOW SPREAD OF DYNAMIC PARAMETERS
n MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
n VERY HIGH SWITCHING SPEED
n ARCING TEST SELF PROTECTED
APPLICATIONS
n LAMP ELECTRONIC BALLAST FOR
FLUORESCENT LIGHTING USING 277V
HALF BRIDGE CURRENT-FED
CONFIGURATION
DESCRIPTION
The BUL903ED is manufactured using high
voltage Multi Epitaxial Planar technology for high
switching speeds and high voltage capability.
The device has been designed in order to
operate without baker clamp and transil
protection. This enables saving from 2 up to 10
components in the application.
INTERNAL SCHEMATIC DIAGRAM
June 1998
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCES Collector-Emitter Voltage (VBE = 0) 900 V
VCEO Collector-Emitter Voltage (IB = 0) 400 V
V
EBO
Emitter-Base Voltage (IC = 0) 7 V
I
C
Collector Current 5 A
ICM Collector Peak Current (tp <5 ms) 8 A
I
B
Base Current 2 A
IBM Base Peak Current (tp <5 ms) 4 A
P
tot
Total Dissipation at Tc = 25
o
C70W
stg
Storage Temperature -65 to 150
o
C
Tj Max. Operating Junction Temperature 150
o
C
1
2
3
TO-220
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