Advanced Analogic Technologies, Inc.
1250 Oakmead Pkwy, Suite 310, Sunnyvale, CA 94086
(408)524-9684 Fax (408)524-9689
AHK6030L
30V N-Channel Power MOSFET
6030L.2001.05.0.91
General Description
Utilizing Analogic Tech’s state-of-the-art
TrenchDMOS
ge2
process, the AHK6030L sets a
new standard in current handling capability and
efficiency for surface mount power MOSFETs.
Gate charge and R
DS(ON)
have been optimized and
package inductance minimized to provide high
efficiency for DC-DC converters.
Applications
•= DC-DC converters for CPU’s
•= High Current Load Switch
Features
•= V
DS(MAX)
= 30V
•= I
D(MAX)
(a)
=44A@25°C
•= I
APP(MAX)
= 17A in typical computer application
•= Low Gate Charge
•= Low R
DS(ON)
:
13.5 mΩ=(max), 9.5 mΩ=(typ) @V
GS
= 10V
20 mΩ=(max), 14 mΩ=(typ) @V
GS
=4.5V
DPAK-L Package DPAK Package
Absolute Maximum Ratings (T
A
=25°C unless otherwise noted)
Symbol Description Value Units
V
DS
Drain-Source Voltage 30
V
GS
Gate-Source Voltage ±20
V
I
D
Continuous Drain Current @ T
J
=150°C
(a)
±44
I
DM
Pulsed Drain Current
(a)
±52
I
S
Continuous Source Current (Source-Drain Diode)
(a)
23
A
T
A
=25°C 39
P
D
Maximum Power Dissipation
(a)
T
A
=70°C 25
W
T
J
,T
STG
Operating Junction and Storage Temperature Range -55 to 150 °C
Thermal Resistance
R
θJA
Maximum Junction-to-Ambient
(a)
96 °C/W
R
θJC
Maximum Junction-to-Case
(a)
3.2 °C/W
G S
Drain-Connected Tab
GS
Drain-Connected Tab
PWMSwitch
TM
Preliminary
I
nformation