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BCR3

器件描述:LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE
器件厂商:MITSUBISHI [Mitsubishi Electric Semiconductor]
文件大小:31KB,共2页
Sponsor by e络盟
器件资料摘要:
Feb.1999
BCR3KM-14 OUTLINE DRAWING Dimensions in mm
TO-220FN
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR3KM-14
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
APPLICATION
Contactless AC switches, light dimmer, electric blankets, control of household equipment
such as electric fan, solenoid drivers, small motor control, other general purpose control
applications
l
IT (RMS)
..................................................................
3A
l
VDRM
.................................................................
700V
l
IFGT !, IRGT

!

, IRGT

#
.....................................
30mA
l
Viso
..................................................................
2000V
] 1. Gate open.
`

´
Measurement point of
case temperature
]

`
´
T1 TERMINAL
T2 TERMINAL
GATE TERMINAL
15

0.3
14

0.5
10 – 0.3 2.8 – 0.2
φ 3.2 – 0.2
1.1 – 0.2
1.1 – 0.2
0.75 – 0.15
2.54 – 0.252.54 – 0.25
2.6

0.2
4.5

0.2
0.75 – 0.15
3

0.3
3.6

0.3
6.5

0.3

E
IT (RMS)
ITSM
I
2
t
PGM
PG (AV)
VGM
IGM
Tj
Tstg

Viso
Symbol
A
A
A
2
s
W
W
V
A
°C
°C
g
V
3
30
3.7
3
0.3
6
0.5
–40 ~ +125
–40 ~ +125
2.0
2000
Symbol
14
700
840
V
V
MAXIMUM RATINGS
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
VDRM
VDSM
RMS on-state current
Surge on-state current
I
2
t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Isolation voltage
Parameter
Parameter
Voltage class
Unit
Ratings UnitConditions
Commercial frequency, sine full wave 360° conduction, Tc=108°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Typical value
Ta=25°C, AC 1 minute, T1 · T2 · G terminal to case
Repetitive peak off-state voltage
] 1
Non-repetitive peak off-state voltage
] 1