Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com 1
Specifications subject to change without notice. 6/99A
General Purpose Packaged PHEMT Chips
Features
a73 Low Noise Figure, 1.55 dB @ 4 GHz
a73 High Associated Gain, 13 dB @ 4 GHz
a73 High MAG, > 15 dB @ 4 GHz
a73 0.7 µm Ti/Pd/Au Gates
a73 Passivated Surface
a73 Low Cost Metal Ceramic Package
a73 Available with Two Lead Lengths
a73 Available in Tape and Reel Packaging
Description
The AFP02N8-212, 213 are general purpose packaged
PHEMT chips that have excellent gain and noise
performance through X band, making them suitable for a
wide range of commercial applications. The devices
employ 0.7 µm Ti/Pd/Au gates and surface passivation to
ensure a rugged, reliable part. Available in metal ceramic
packages with a choice of two lead lengths. The
components are also available in tape and reel and are
ready for automatic insertion equipment.
AFP02N8-212, AFP02N8-213
Parameter Test Conditions Min. Typ. Max. Unit
Saturated Drain Current (I
DSS
)V
DS
= 2 V, V
GS
= 0 V 25.0 55.0 90.0 mA
Transconductance (gm) V
DS
= 2 V, I
DS
= 15 mA 30.0 45.0 mS
Pinch-off Voltage (V
P
) V
DS
= 2 V, I
DS
= 0.3 mA -0.4 -1.2 -2.0 V
Gate to Source I
GS
= -200 µA -6.0 8.0 V
Breakdown Voltage (V
bgs
)
Noise Figure (NF)
V
DS
= 2 V, I
DS
= 15 mA, F = 4 GHz
1.55 2.0 dB
Associated Gain (G
A
) 12.0 13.2 dB
Electrical Specifications at 25°C
Source
Gate
Source
Drain
Drain
Source Gate
Source
212
213
Characteristic Value
Drain to Source Voltage (V
DS
) 6 V
Gate to Source Voltage (V
GS
) -3 V
Drain Current (I
DS
) I
DSS
Gate Current (I
GS
) 10 µA
Total Power Dissipation (P
T
) 300 mW
Storage Temperature (T
ST
) -65 to +150°C
Channel Temperature (T
CH
) 175°C
Absolute Maximum Ratings