Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com 1
Specifications subject to change without notice. 6/99A
General Purpose PHEMT Chip
Features
a73 Low Noise Figure, 1.25 dB @ 4 GHz
a73 High Associated Gain, 15.0 dB @ 4 GHz
a73 High MAG, > 18 dB @ 4 GHz
a73 0.7 µm Ti/Pd/Au Gates
a73 Passivated Surface
Description
The AFP02N8-000 general purpose PHEMT chip has
excellent gain and noise performance through X band,
making it suitable for a wide range of commercial and military
applications.The device employs 0.7 µm Ti/Pd/Au gates and
surface passivation to ensure a rugged, reliable part.
AFP02N8-000
Parameter Test Conditions Min. Typ. Max. Unit
Saturated Drain Current (I
DSS
)V
DS
= 2 V, V
GS
= 0 V 25.0 45.0 90.0 mA
Transconductance (gm) V
DS
= 2 V, I
DS
= 15 mA 40.0 55.0 mS
Pinch-off Voltage (V
P
) V
DS
= 2 V, I
DS
= 0.3 mA -0.2 -0.6 -2.0 V
Gate to Source I
GS
= -200 µA -4.0 -6.0 V
Breakdown Voltage (V
bgs
)
Noise Figure (NF)
V
DS
= 2 V, I
DS
= 15 mA, F = 4 GHz
1.25 1.75 dB
Associated Gain (G
A
) 14.0 15.0 dB
Noise Figure (NF)
V
DS
= 2 V, I
DS
= 15 mA, F = 12 GHz
2.6 3.0 dB
Associated Gain (G
A
) 8.5 9.4 dB
Electrical Specifications at 25°C
78
50
50
50
400
50
20
125
350
D
SS
GG
D
Characteristic Value
Drain to Source Voltage (V
DS
) 6 V
Gate to Source Voltage (V
GS
) -3 V
Drain Current (I
DS
) I
DSS
Gate Current (I
GS
) 10 µA
Total Power Dissipation (P
T
) 300 mW
Storage Temperature (T
ST
) -65 to +150°C
Channel Temperature (T
CH
) 175°C
Absolute Maximum Ratings