Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com 1
Specifications subject to change without notice. 6/99A
Ka Band Power GaAs MESFET Chips
Features
a73 22 dBm Output Power @ 18 GHz
a73 High Associated Gain, 9 dB @ 18 GHz
a73 High Power Added Efficiency, 23%
a73 Broadband Operation, DC–18 GHz
a73 0.25 µm Ti/Pd/Au Gates
a73 Passivated Surface
Description
The AFM06P3-212, 213 are high performance power
GaAs MESFET chips in an industry standard ceramic
micro-x package, having a gate length of 0.25 µm and a
total gate periphery of 600 µm. These devices have
excellent gain and power performance through 26 GHz,
making them suitable for a wide range of commercial and
military applications in oscillator and amplifier circuits.They
employ Ti/Pd/Au gate metallization and surface
passivation to ensure a rugged, reliable part.
AFM06P3-212, AFM06P3-213
Parameter Test Conditions Min. Typ. Max. Unit
Saturated Drain Current (I
DSS
) 130.0 200.0 270.0 mA
Transconductance (gm)
V
DS
= 2 V, V
GS
= 0 V
90.0 120.0 mS
Pinch-Off Voltage (V
P
)V
DS
= 5 V, I
DS
= 1.5 mA 1.0 3.0 5.0 V
Gate to Drain Breakdown I
GD
= 600 µA 8.0 12.0 V
Voltage (V
bgd
)
Output Power at 1 dB 22.0 dBm
Compression (P
1 dB
)
Gain at 1 dB Compression (G
1 dB
)
V
DS
= 5 V, I
DS
= 70 mA, F = 18 GHz
9.0 dB
Power Added Efficiency (ηadd) 23.0 %
Electrical Specifications at 25°C
Source
Gate
Source
Drain
Drain
Source Gate
Source
212
213
Characteristic Value
Drain to Source Voltage (V
DS
) 6 V
Gate to Source Voltage (V
GS
) -4 V
Drain Current (I
DS
) I
DSS
Gate Current (I
GS
) 1 mA
Total Power Dissipation (P
T
) 1.1 W
Storage Temperature (T
ST
) -65 to +150°C
Channel Temperature (T
CH
) 175°C
Absolute Maximum Ratings