AFM04P2-000
器件资料摘要：
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com 1
Specifications subject to change without notice. 12/99A
Ka Band Power GaAs MESFET Chip
Features
a73 21 dBm Output Power @ 18 GHz
a73 High Associated Gain, 9 dB @ 18 GHz
a73 High Power Added Efficiency, 25%
a73 Broadband Operation, DC–40 GHz
a73 0.25 µm Ti/Pd/Au Gates
a73 Passivated Surface
a73 Through-Substrate Via Hole Grounding
Description
The AFM04P2-000 is a high performance power GaAs
MESFET chip having a gate length of 0.25 µm and a
total gate periphery of 400 µm. The device has
excellent gain and power performance through 40 GHz,
making it suitable for a wide range of commercial and
military applications in oscillator and amplifier circuits. It
employs Ti/Pd/Au gate metallization and surface
passivation to ensure a rugged, reliable part. Through-
substrate via holes are incorporated into the chip to
facilitate low inductance grounding of the source for
improved high frequency and high gain performance.
AFM04P2-000
Parameter Test Conditions Min. Typ. Max. Unit
Saturated Drain Current (I
DSS
)
V
DS
= 2 V, V
GS
= 0 V
90.0 140.0 190.0 mA
Transconductance (gm) 60.0 80.0 mS
Pinch-off Voltage (V
P
) V
DS
= 5 V, I
DS
= 1 mA 1.0 3.0 5.0 -V
Gate to Drain I
GD
= -400 µA 8.0 12.0 -V
Breakdown Voltage (V
bgd
)
Output Power at 1 dB 21.0 dBm
Compression (P
1 dB
)
Gain at 1 dB Compression (G
1 dB
)
V
DS
= 5 V, I
DS
= 70 mA, F = 18 GHz
9.0 dB
Power Added Efficiency (ηadd) 25.0 %
Output Power at 1 dB 20.0 dBm
Compression (P
1 dB
)
Gain at 1 dB Compression (G
1 dB
)
V
DS
= 5 V, I
DS
= 70 mA, F = 30 GHz
5.0 dB
Power Added Efficiency (ηadd) 15.0 %
Thermal Resistance (Θ
JC
) T
BASE
= 25°C 250.0 °C/W
Electrical Specifications at 25°C
0.395 mm
0.327 mm
Drain
Gate
0.655 mm
0.110 mm
0.110 mm
Characteristic Value
Drain to Source Voltage (V
DS
) 6 V
Gate to Source Voltage (V
GS
) -4 V
Drain Current (I
DS
) I
DSS
Gate Current (I
GS
) 1 mA
Total Power Dissipation (P
T
) 700 mW
Storage Temperature (T
ST
) -65 to +150°C
Channel Temperature (T
CH
) 175°C
Absolute Maximum Ratings
Chip thickness = 0.1 mm.
Specifications subject to change without notice. 12/99A
Ka Band Power GaAs MESFET Chip
Features
a73 21 dBm Output Power @ 18 GHz
a73 High Associated Gain, 9 dB @ 18 GHz
a73 High Power Added Efficiency, 25%
a73 Broadband Operation, DC–40 GHz
a73 0.25 µm Ti/Pd/Au Gates
a73 Passivated Surface
a73 Through-Substrate Via Hole Grounding
Description
The AFM04P2-000 is a high performance power GaAs
MESFET chip having a gate length of 0.25 µm and a
total gate periphery of 400 µm. The device has
excellent gain and power performance through 40 GHz,
making it suitable for a wide range of commercial and
military applications in oscillator and amplifier circuits. It
employs Ti/Pd/Au gate metallization and surface
passivation to ensure a rugged, reliable part. Through-
substrate via holes are incorporated into the chip to
facilitate low inductance grounding of the source for
improved high frequency and high gain performance.
AFM04P2-000
Parameter Test Conditions Min. Typ. Max. Unit
Saturated Drain Current (I
DSS
)
V
DS
= 2 V, V
GS
= 0 V
90.0 140.0 190.0 mA
Transconductance (gm) 60.0 80.0 mS
Pinch-off Voltage (V
P
) V
DS
= 5 V, I
DS
= 1 mA 1.0 3.0 5.0 -V
Gate to Drain I
GD
= -400 µA 8.0 12.0 -V
Breakdown Voltage (V
bgd
)
Output Power at 1 dB 21.0 dBm
Compression (P
1 dB
)
Gain at 1 dB Compression (G
1 dB
)
V
DS
= 5 V, I
DS
= 70 mA, F = 18 GHz
9.0 dB
Power Added Efficiency (ηadd) 25.0 %
Output Power at 1 dB 20.0 dBm
Compression (P
1 dB
)
Gain at 1 dB Compression (G
1 dB
)
V
DS
= 5 V, I
DS
= 70 mA, F = 30 GHz
5.0 dB
Power Added Efficiency (ηadd) 15.0 %
Thermal Resistance (Θ
JC
) T
BASE
= 25°C 250.0 °C/W
Electrical Specifications at 25°C
0.395 mm
0.327 mm
Drain
Gate
0.655 mm
0.110 mm
0.110 mm
Characteristic Value
Drain to Source Voltage (V
DS
) 6 V
Gate to Source Voltage (V
GS
) -4 V
Drain Current (I
DS
) I
DSS
Gate Current (I
GS
) 1 mA
Total Power Dissipation (P
T
) 700 mW
Storage Temperature (T
ST
) -65 to +150°C
Channel Temperature (T
CH
) 175°C
Absolute Maximum Ratings
Chip thickness = 0.1 mm.