PRELIMINARY
Am29F040B
4 Megabit (512 K x 8-Bit)
CMOS 5.0 Volt-only, Uniform Sector Flash Memory
Distinctive Characteristics
a73 5.0 V ± 10% for read and write operations
— Minimizes system level power requirements
a73 Manufactured on 0.35 µm process technology
— Compatible with 0.5 µm Am29F040 device
a73 High performance
— Access times as fast as 55 ns
a73 Low power consumption
— 20 mA typical active read current
— 30 mA typical program/erase current
— 1 µA typical standby current (standard access
time to active mode)
a73 Flexible sector architecture
— 8 uniform sectors of 64 Kbytes each
— Any combination of sectors can be erased
— Supports full chip erase
— Sector protection:
A hardware method of locking sectors to prevent
any program or erase operations within that
sector
a73 Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies bytes at specified addresses
a73 Minimum 1,000,000 program/erase cycles per
sector guaranteed
a73 Package options
— 32-pin PLCC, TSOP, or PDIP
a73 Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply Flash standard
— Superior inadvertent write protection
a73 Data# Polling and toggle bits
— Provides a software method of detecting
program or erase cycle completion
a73 Erase Suspend/Erase Resume
— Suspends a sector erase operation to read data
from, or program data to, a non-erasing sector,
then resumes the erase operation
Publication# 21445 Rev: B Amendment/+2
Issue Date: April 1998