AF002C4-39
器件描述：GaAs IC Control FET Series DC-2.5 GHz
器件厂商：ALPHA [Alpha Industries]
文件大小：43.27KB，共4页
Sponsor by e络盟器件资料摘要：
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com 1
Specifications subject to change without notice. 3/99A
GaAs IC Control FET Series
DC–2.5 GHz
AF002C1-39, AF002C4-39
Part Number
1
Frequency
2
R
ON
(Ω)
3
Insertion Loss (dB)
4,5
C
OFF
(pF)
6
Isolation (db)
5
P
-1 dB
(W)
(GHz) Typ. Max. Series Shunt Typ. Max. Series Shunt Typ.
AF002C1-39 DC–0.5 GHz 6.4 9.0 0.50 0.10 0.13 0.25 25 12 0.5
DC–1.0 GHz 6.4 9.0 0.60 0.15 0.13 0.25 17 8 1.0
DC–2.5 GHz 6.4 9.0 0.70 0.20 0.13 0.25 13 3 1.0
AF002C4-39 DC–0.5 GHz 0.8 1.1 0.20 0.15 1.10 1.50 11 15 6
DC–1.0 GHz 0.8 1.1 0.25 0.25 1.10 1.50 6 9 10
DC–2.5 GHz 0.8 1.1 0.30 2.00 1.10 1.5 3 4 10
Electrical Specifications at 25°C (0, -5 V)
0.045
(1.14 mm)
0.035
(0.89 mm)
0.004 (0.10 mm)
0.0005 (0.01 mm)0.027 (0.69 mm) REF.
0.007 (0.18 mm)
0.003 (0.08 mm)
0.120 (3.05 mm)
0.110 (2.79 mm)
0.104 (2.64 mm)
0.083 (2.10 mm)
0.055 (1.40 mm)
0.047 (1.19 mm)
0.024 (0.61 mm)
0.018 (0.45 mm)
0.080 (2.03 mm)
0.070 (1.78 mm)
0.018 (0.45 mm)
0.015 (0.38 mm)
3
1 2
0.040 (1.02 mm)
0.037 (0.94 mm)
Features
a73 Low Cost SOT-23 Package
a73 Series or Shunt Configuration
a73 Low DC Current Drain
a73 Ideal Switch Building Blocks
a73 Pin Diode Replacements
a73 High Power Antenna Switches
SOT-23
Description
This group of GaAs control FETs can be used in both
series and shunt configurations.They incorporate on-chip
circuitry that eliminates the need for extra bias
components and minimizes power drain to typically 25 µW.
These features make the device ideal replacements for
PIN diodes, where low DC drain is critical.
Isolation performance degrades at higher frequencies due
to package parasitics. They can be tuned out in narrow
band applications as shown in the circuit examples on the
following pages.
Parameter Condition Frequency Min. Typ. Max. Unit
Switching Characteristics Rise, Fall (10/90% or 90/10% RF) 6 ns
On, Off (50% CTL to 90/10% RF) 12 ns
Control Voltages V
Low
= 0 to -0.2 V @ 20 µA Max.
V
High
= -5 V @ 50 µA to -9 V @ 200 µA Max.
Operating Characteristics at 25°C (0, -5 V)
1. All measurements made in a 50 Ω system, unless otherwise specified.
2. DC = 300 kHz.
3. R
ON
- resistance in Ω in low impedance state when “0” V is applied to Gate (G).
4. Insertion loss changes by 0.003 dB/°C.
5. Insertion loss and isolation typical values.
6. C
OFF
- capacitance (pF) in high impedance state when -5 V is applied to Gate (G).
Specifications subject to change without notice. 3/99A
GaAs IC Control FET Series
DC–2.5 GHz
AF002C1-39, AF002C4-39
Part Number
1
Frequency
2
R
ON
(Ω)
3
Insertion Loss (dB)
4,5
C
OFF
(pF)
6
Isolation (db)
5
P
-1 dB
(W)
(GHz) Typ. Max. Series Shunt Typ. Max. Series Shunt Typ.
AF002C1-39 DC–0.5 GHz 6.4 9.0 0.50 0.10 0.13 0.25 25 12 0.5
DC–1.0 GHz 6.4 9.0 0.60 0.15 0.13 0.25 17 8 1.0
DC–2.5 GHz 6.4 9.0 0.70 0.20 0.13 0.25 13 3 1.0
AF002C4-39 DC–0.5 GHz 0.8 1.1 0.20 0.15 1.10 1.50 11 15 6
DC–1.0 GHz 0.8 1.1 0.25 0.25 1.10 1.50 6 9 10
DC–2.5 GHz 0.8 1.1 0.30 2.00 1.10 1.5 3 4 10
Electrical Specifications at 25°C (0, -5 V)
0.045
(1.14 mm)
0.035
(0.89 mm)
0.004 (0.10 mm)
0.0005 (0.01 mm)0.027 (0.69 mm) REF.
0.007 (0.18 mm)
0.003 (0.08 mm)
0.120 (3.05 mm)
0.110 (2.79 mm)
0.104 (2.64 mm)
0.083 (2.10 mm)
0.055 (1.40 mm)
0.047 (1.19 mm)
0.024 (0.61 mm)
0.018 (0.45 mm)
0.080 (2.03 mm)
0.070 (1.78 mm)
0.018 (0.45 mm)
0.015 (0.38 mm)
3
1 2
0.040 (1.02 mm)
0.037 (0.94 mm)
Features
a73 Low Cost SOT-23 Package
a73 Series or Shunt Configuration
a73 Low DC Current Drain
a73 Ideal Switch Building Blocks
a73 Pin Diode Replacements
a73 High Power Antenna Switches
SOT-23
Description
This group of GaAs control FETs can be used in both
series and shunt configurations.They incorporate on-chip
circuitry that eliminates the need for extra bias
components and minimizes power drain to typically 25 µW.
These features make the device ideal replacements for
PIN diodes, where low DC drain is critical.
Isolation performance degrades at higher frequencies due
to package parasitics. They can be tuned out in narrow
band applications as shown in the circuit examples on the
following pages.
Parameter Condition Frequency Min. Typ. Max. Unit
Switching Characteristics Rise, Fall (10/90% or 90/10% RF) 6 ns
On, Off (50% CTL to 90/10% RF) 12 ns
Control Voltages V
Low
= 0 to -0.2 V @ 20 µA Max.
V
High
= -5 V @ 50 µA to -9 V @ 200 µA Max.
Operating Characteristics at 25°C (0, -5 V)
1. All measurements made in a 50 Ω system, unless otherwise specified.
2. DC = 300 kHz.
3. R
ON
- resistance in Ω in low impedance state when “0” V is applied to Gate (G).
4. Insertion loss changes by 0.003 dB/°C.
5. Insertion loss and isolation typical values.
6. C
OFF
- capacitance (pF) in high impedance state when -5 V is applied to Gate (G).