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厂商索引:A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-S-T-U-V-W-X-Y-Z

ADS8616A8A-75

器件描述:Synchronous DRAM(4M X 16 Bit X 4 Banks)
器件厂商:A-DATA [A-Data Technology]
文件大小:550.52KB,共8页
Sponsor by e络盟
器件资料摘要:
A-Data ADS8616A8A
Synchronous DRAM 4M x 16 Bit x 4 Banks

General Description
The ADS8616A8A are four-bank Synchronous
DRAMs organized as 4,194,304 words x 16 bits x 4
banks,
Synchronous design allows precise cycle control
with the use of system clock I/O transactions are
possible on every clock cycle.
Range of operating frequencies, programmable
burst length and programmable latencies allow the
same device to be useful for a variety of high
bandwidth high performance memory system
applications

Features
•JEDEC standard LVTTL 3.3V power supply
•MRS Cycle with address key programs
-CAS Latency (2 & 3)
-Burst Length (1,2,4,8,& full page)
-Burst Type (sequential & Interleave)
•4 banks operation
•All inputs are sampled at the positive edge of
the system clock
•Burst Read single write operation
•Auto & Self refresh
•DQM for masking
•8192 Refresh Cycles
•Package:54-pins 400 mil TSOP-Type II
Ordering Information.
Part No. Frequency Interface Package
ADS8616A8A-75 133Mhz-333 LVTTL 400mil 54pin TSOPII
ADS8616A8A-75A 133Mhz-222 LVTTL 400mil 54pin TSOPII
Pin Assignment
54
53
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27 28
52
51
50
49
48
47
46
45
44
43
36
37
35
34
33
41
42
40
39
38
32
31
30
29
Vss
DQ7
VssQ
NC
DQ6
VDDQ
NC
DQ5
VSSQ
NC
DQ4
VDDQ
NC
VSS
NC/RFU
DQM
CK
CKE
NC
A11
A9
A8
A7
A6
A5
A4
VSS
VDD
DQ0
VDDQ
NC
DQ1
VSSQ
NC
DQ2
VDDQ
NC
DQ3
VSSQ
NC
VDD
NC
/WE
/CAS
/RAS
/CS
BA0
BA1
A10/AP
A0
A1
A2
A3
VDD

54-pin plastic TSOP II 400 mil
Rev 1.0 December, 2001 1