ADS7616A4A
器件描述:Synchronous DRAM(2M X 16 Bit X 4 Banks)
文件大小:565.37KB,共8页
Sponsor by e络盟
器件资料摘要:
A-Data ADS7616A4A
Rev 1.0 April, 2001 1
Synchronous DRAM 2M x 16 Bit x 4 Banks
Ordering Information.
Part No. Frequency Interface Package
ADS7616A4A-55 183Mhz LVTTL 400mil 54pin TSOPII
ADS7616A4A-6 166Mhz LVTTL 400mil 54pin TSOPII
ADS7616A4A-7 143Mhz LVTTL 400mil 54pin TSOPII
Pin Assignment
54
53
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27 28
52
51
50
49
48
47
46
45
44
43
36
37
35
34
33
41
42
40
39
38
32
31
30
29
Vss
DQ15
VssQ
DQ14
DQ13
VDDQ
DQ12
DQ11
VSSQ
DQ10
DQ9
VDDQ
DQ8
VSS
NC
UDQM
CLK
CKE
NC
A11
A9
A8
A7
A6
A5
A4
VSS
VDD
DQ0
VDDQ
DQ1
DQ2
VSSQ
DQ3
DQ4
VDDQ
DQ5
DQ6
VSSQ
DQ7
VDD
LDQM
/WE
/CAS
/RAS
/CS
BS0
BS1
A10/AP
A0
A1
A2
A3
VDD
54-pin plastic TSOP II 400 mil
General Description
The ADS7616A4A are four-bank Synchronous
DRAMs organized as 2,097152 words x 16 bits x 4
banks.
Synchronous design allows precise cycle control
with the use of system clock I/O transactions are
possible on every clock cycle.
Range of operating frequencies, programmable
burst length and programmable latencies allow the
same device to be useful for a variety of high
bandwidth high performance memory system
applications
Features
•JEDEC standard LVTTL 3.3V power supply
•MRS Cycle with address key programs
-CAS Latency (2 & 3)
-Burst Length (1,2,4,8,& full page)
-Burst Type (sequential & Interleave)
•4 banks operation
•All inputs are sampled at the positive edge of
the system clock
•Burst Read single write operation
•Auto & Self refresh
•4096 refresh cycle
•DQM for masking
•Package:54-pins 400 mil TSOP-Type II