Specifications and information herin are subject to change without notice.
990915TM2fXHD
Absolute Maximum Ratings / Ta=25°C
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable power Dissipation
Channel Temperature
Storage Temperature
Electrical Characteristics / Ta=25°C
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain to Source
on State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-oFF Delay Time
Fall Time
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Diode Forward Voltage
TENTATIVE
Features and Applications
• Low ON-state resistance.
• Very high - speed switching.
• 4V drive.
SANYO Electric Co., Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10,1 Chome, Ueno, taito-ku, 110 JAPAN
2SK3352
P- Channel Silicon MOS FET
DC-DC Converter
V
V
A
A
W
W
°C
°C
min typ max unit
30
1.0
19
1
±10
2.4
15
21
1.2
V
µA
µA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
27
11
15
1400
420
210
14
530
100
150
28
4.6
5
1.0
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW≤10µs, duty cycle≤1%
Tc=25°C
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=1mA , VGS=0
VDS=30V , VGS=0
VGS=±16V , VDS=0
VDS=10V , ID=1mA
VDS=10V , ID=20A
ID=20A , VGS=10V
ID=10A , VGS=4.5V
VDS=10V , f=1MHz
VDS=10V , f=1MHz
VDS=10V , f=1MHz

VDS=10V, VGS=10V, ID=20A
IS=45A , VGS= 0
unit
30
±20
45
80
1.65
40
150
--55 to +150
1 : Gate
2 : Drain
3 : Source
4 : Drain
Package Dimensions
Marking : K3352
See specified Test Circuit
30° 30°
10.2
20.9
11.5
9.4
0.8
1.6
1.2
0.9
11.0
8.8
4.5
1.3
0.4
2.552.55
2.7
123
4
4
4
SMP-FA (unit : mm)SMP-FD (unit : mm)
1 : Gate
2 : Drain
3 : Source
4 : Drain
1 : Gate
2 : Drain
3 : Source
4 : Drain
10.2 4.5
1.3
1.2
0.8
1 2 3
0.4
9.9
0.9
8.8
2.0 2.5
1.54.5
2.55 2.55
2.7
SMP(unit:mm)
10.2
1.2
2.55
2.552.55
2.55
4.5
0to0.3
0.4
1.3
9.9
3.0
2.7
1.35
8.8
1.4
1.5max
0.9
0.8
123