© 1996
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ463A
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR HIGH SPEED SWITCHING
Document No. D11198EJ1V0DS00 (1st edition)
Date Published September 1996 P
Printed in Japan
DESCRIPTION
The 2SJ463A is a switching device which can be driven directly
by a 2.5 V power source.
The 2SJ463A has excellent switching characteristics, and is
suitable for use as a high-speed switching device in digital circuits.
FEATURES
• Can be driven by a 2.5 V power source.
• Low Gate Cut-off Voltage.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage VDSS –30 V
Gate to Source Voltage VGSS +20 V
Drain Current (DC) ID(DC) +0.1 A
Drain Current (pulse) ID(pulse) +0.4
Note
A
Total Power Dissipation PT 150 mW
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 to +150 °C
Note PW ≤ 10 µs, Duty Cycle ≤ 1 %
Package Drawings (unit: mm)
Equivalent Circuit
2.0 ±0.2
0.65
0.65
2.1 ±0.1
0.15
+0.1 –0.05
0.3
0.9 ±0.1
0.3
+0.1 –0
0.3
+0.1 –0
2
1
3
1.25 ±0.1
Marking
0 to 1.1
Internal Diode
Source
Drain
Gate
Gate Protect
Diode
Electrode
Connection
1. Source
2. Gate
3. Drain
Marking : H21
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage
may be applied to this device.