2SD2675
Transistors
Rev.A 1/2
General purpose amplification (30V, 1A)
2SD2675


zApplication
Low frequency amplifier


zFeatures
1) A collector current is large.
2) Collector saturation voltage is low.
VCE(sat) ≦ 350mV
At IC = 500mA / IB = 25mA




zExternal dimensions (Units : mm)
ROHM : TSMT3 (1) Base
(2) Emitter
(3) Collector
1.6
2.8
0.4
0.16
0~0.1
0.3
(
3
)
0.850.7
0.95
(1)
2.9 1.9
(2)
0.95
Each lead has same dimensions
Abbreviated symbol : EU
~0.6
1.0MAX



zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol Unit
∗1
VCBO VCollector-base voltage
VCEO VCollector-emitter voltage
VEBO VEmitter-base voltage
IC A
ICP A
Collector current
PC
mW
Power dissipation
Tj °CJunction temperature
Tstg
Limits
30
30
6
1
2
500
W1
150
−55 to +150 °CRange of storage temperature
Single pulse, PW=1ms
∗2
Mounted on a 25×25× 0.8mm Ceramic substrate
∗1
∗2
t

zPackaging specifications
2SD2675
TL
3000
Type
Package
Code
Basic ordering unit (pieces)
Taping






zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
30 −− V IC=10µACollector-base breakdown voltage BVCBO
30 −− V IC=1mACollector-emitter breakdown voltage BVCEO
6 −− V IE=10µAEmitter-base breakdown voltage BVEBO
−−100 nA VCB=30VCollector cutoff current ICBO
Emitter cutoff current −−100 nA VEB=6VIEBO
− 120 350 mV IC/IB=500mA/25mACollector-emitter saturation voltage VCE(sat)
270 − 680 − VCE/IC=2V/100mADC current gain hFE
− 320 − MHz VCE=2V, IE=−100mA, f=100MHzTransition frequency fT
− 7 − pF VCB=10V, IE=0A, f=1MHzCorrector output capacitance Cob
∗
∗
∗ Pulsed