TO-252 Plastic-Encapsulated Transistors


2SD1899-Z TRANSISTOR (NPN)

FEATURES
Power dissipation
P
CM
: 2 W (Tamb=25℃)
Collector current
I
CM
: 3 A
Collector-base voltage
V
(BR)CBO
: 60 V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specifie)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic=100µA, I
E
=0 60 V
Collector-emitter breakdown voltage V(BR)CEO Ic=1mA, I
B
=0 60 V
Emitter-base breakdown voltage V(BR)EBO I
E
=100µA,I
C
=0 7 V
Collector cut-off current ICBO V
CB
=60V, I
E
=0 10 µA
Emitter cut-off current IEBO V
EB
=7V, I
C
=0 10 µA
h
FE(1)
V
CE
=2V, I
C
=200mA 60
h
FE(2)
V
CE
=2V, I
C
=600mA 100 400 DC current gain
h
FE(3)
V
CE
=2V, I
C
=2A 50
Collector-emitter saturation voltage VCE(sat) I
C
=1.5A, I
B
=150mA 0.25 V
Base-emitter saturation voltage VBE(sat) I
C
=1.5A, I
B
=150mA 1.2 V
Transition frequency f
T
V
CE
=5V, I
C
=1.5A 120 MHz
Collector output capacitance Cob V
CB
=10V, I
E
=0, f=1MHz 30 pF
Turn on Time ton 0.5
Storage Time tstg 2.0 Switching Time
Fall Time tf
V
CC
=30V, I
C
=1A, I
B1
=-I
B2
=-0.05A
0.5
µs

CLASSIFICATION OF h
FE(1)

Rank M L K
Range 100-200 160-320 200-400













TO-252


1. BASE

2. COLLECTOR

3. EMITTER

1 2 3
Transys
Electronics
LIM ITED