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2SC4256

器件描述:1200V/10mA High-Voltage Amplifier, High-Voltage Switching Applications
器件厂商:SANYO [Sanyo Semicon Device]
文件大小:20.85KB,共1页
Sponsor by e络盟
器件资料摘要:
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Triple Diffused Planar Silicon Transistor
1200V/10mA High-Voltage Amplifier,
High-Voltage Switching Applications
Ordering number:EN2924A
2SC4256
D1598HA (KT)/D148MO, TS No.2924–1/3
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Package Dimensions
unit:mm
2010C
[2SC4256]
Features
· High breakdown voltage.
· Small C
ob
.
· Wide ASO.
· High reliability (Adoption of HVP process).
˚C
˚C
Electrical Characteristics at Ta = 25˚C
1 : Base
2 : Collector
3 : Emitter
JEDEC : TO-220AB
EIAJ : SC-46
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
OBC
0051V
egatloVrettimE-ot-rotcello
OEC
0021V
egatloVesaB-ot-rettimEV
OBE
5V
tnerruCrotcelloCI
C
01Am
)esluP(tnerruCrotcello
PC
03Am
noitapissiDrotcelloCP
C
57.1W
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
retemaraPlobmySsnoitidnoC
sgnitaR
tinU
nimpytxam
tnerruCffotuCrotcelloCI
OBC
V
BC
I,V0021=
E
0=1Aµ
tnerruCffotuCrettimEI
OBE
V
BE
I,V4=
C
0 µ
niaGtnerruCCD h
EF
V
EC
I,V5=
C
Am5.0= 0106
tcudorPhtdiwdnaB-niaGf
T
V
EC
I,V01=
C
Am5.0= 6zHM
egatloVnoitarutaSrettimE-ot-rotcelloCV
)tas(EC
I
C
I,Am1=
B
Am2.0= 5V
egatloVnoitarutaSrettimE-ot-esaBV
)tas(EB
I
C
I,Am1=
B
Am2.0=2V
egatloVnwodkaerBesaB-ot-rotcello
OBC)RB(
I
C
I,Aµ001=
E
0=0051V
egatloVnwodkaerBrettimE-ot-rotcello
OEC)RB(
I
C
R,Am1=
EB
=¥ 002
egatloVnwodkaerBesaB-ot-rettimEV
OBE)RB(
I
E
I,Aµ001=
C
0=5
ecnaticapaCtuptuOC
bo
V
BC
zHM1=f,V001= 6.1Fp
10.2
5.13.6
18.0
5.6
2.7
6.3
15.1
1.2
14.0
0.8
1.3
4.5
0.4
2.552.55
2.7
123