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a
ADG736
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700 World Wide Web Site: http://www.analog.com
Fax: 781/326-8703 © Analog Devices, Inc., 1998
CMOS
Low Voltage 4 V Dual SPDT Switch
FUNCTIONAL BLOCK DIAGRAM
S1A
S1B
IN1
S2A
S2B
IN2
ADG736
D1
D2
SWITCHES SHOWN FOR A LOGIC "1" INPUT
FEATURES
+1.8 V to +5.5 V Single Supply
2.5 V (Typ) On Resistance
Low On-Resistance Flatness
–3 dB Bandwidth >200 MHz
Rail-to-Rail Operation
10-Lead mSOIC Package
Fast Switching Times
t
ON
16 ns
t
OFF
8 ns
Typical Power Consumption (<0.01 mW)
TTL/CMOS Compatible
APPLICATIONS
Battery Powered Systems
Communication Systems
Sample-and-Hold Systems
Audio Signal Routing
Audio and Video Switching
Mechanical Reed Relay Replacement
GENERAL DESCRIPTION
The ADG736 is a monolithic device comprising two indepen-
dently selectable CMOS SPDT switches. These switches are
designed on a submicron process that provides low power dissi-
pation yet gives high switching speed, low on resistance, low
leakage currents and wide input signal bandwidth.
The on resistance profile is very flat over the full analog signal
range. This ensures excellent linearity and low distortion when
switching audio signals. Fast switching speed also makes the
part suitable for video signal switching.
The ADG736 can operate from a single +1.8 V to +5.5 V sup-
ply, making it ideally suited to portable and battery powered
instruments.
Each switch conducts equally well in both directions when on
and has an input signal range that extends to the power supplies.
The ADG736 exhibits break-before-make switching action.
The ADG736 is available in a 10-lead m SOIC package.
PRODUCT HIGHLIGHTS
1. +1.8 V to +5.5 V Single Supply Operation.
The ADG736 offers high performance, including low on
resistance and fast switching times and is fully specified and
guaranteed with +3 V and +5 V supply rails.
2. Very Low R
ON
(4.5 W Max at 5 V, 8 W Max at 3 V).
At supply voltage of +1.8 V, R
ON
is typically 35 W over the
temperature range.
3. Low On-Resistance Flatness.
4. –3 dB Bandwidth >200 MHz.
5. Low Power Dissipation.
CMOS construction ensures low power dissipation.
6. Fast t
ON
/t
OFF
.
7. Break-Before-Make Switching Action.
8. 10-Lead m SOIC Package.