REV. A
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a
ADG719
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700 World Wide Web Site: http://www.analog.com
Fax: 781/326-8703 © Analog Devices, Inc., 1998
CMOS
Low Voltage 4 V SPDT Switch
FUNCTIONAL BLOCK DIAGRAM
IN
ADG719
S2
S1
SWITCHES SHOWN FOR A LOGIC "1" INPUT
D
FEATURES
+1.8 V to +5.5 V Single Supply
4 V (Max) On Resistance
0.75 V (Typ) On-Resistance Flatness
–3 dB Bandwidth >200 MHz
Rail-to-Rail Operation
6-Lead SOT-23 Package, 8-Lead mSOIC Package
Fast Switching Times
t
ON
20 ns
t
OFF
6 ns
Typical Power Consumption (<0.01 mW)
TTL/CMOS Compatible
APPLICATIONS
Battery Powered Systems
Communication Systems
Sample Hold Systems
Audio Signal Routing
Video Switching
Mechanical Reed Relay Replacement
GENERAL DESCRIPTION
The ADG719 is a monolithic CMOS SPDT switch. This switch
is designed on a submicron process that provides low power
dissipation yet gives high switching speed, low on resistance and
low leakage currents.
The ADG719 can operate from a single supply range of +1.8 V
to +5.5 V, making it ideal for use in battery-powered instruments
and with the new generation of DACs and ADCs from Analog
Devices.
Each switch of the ADG719 conducts equally well in both di-
rections when on. The ADG719 exhibits break-before-make
switching action.
Because of the advanced submicron process, –3 dB bandwidths
of greater than 200 MHz can be achieved.
The ADG719 is available in a 6-lead SOT-23 package and an
8-lead m SOIC package.
PRODUCT HIGHLIGHTS
1. +1.8 V to +5.5 V Single Supply Operation. The ADG719
offers high performance, including low on resistance and fast
switching times and is fully specified and guaranteed with
+3 V and +5 V supply rails.
2. Very Low R
ON
(4 W max at 5 V, 10 W max at 3 V). At 1.8 V
operation, R
ON
is typically 40 W over the temperature range.
3. On-Resistance Flatness (R
FLAT(ON)
) (0.75 W typ).
4. –3 dB Bandwidth >200 MHz.
5. Low Power Dissipation. CMOS construction ensures low
power dissipation.
6. Fast t
ON
/t
OFF.
7. Tiny 6-lead SOT-23 and 8-lead m SOIC packages.