FEATURES
eroflex Circuit Technology - Advanced Multichip Modules © SCD3853 REV B 5/18/99
CIRCUIT TECHNOLOGYwww.aeroflex.com
n 2 – 128K x 8 SRAMs & 2 – 512K x 8 Flash Die in
One MCM
n Access Times of 25ns (SRAM) and 60ns (Flash)
or 35ns (SRAM) and 70 or 90ns (Flash)
n Organized as 128K x 16 of SRAM and 512K x 16
of Flash Memory with Separate Data Buses
n Both Blocks of Memory are User Configurable as
512KX8 AND 1MX8 Respectively
n Low Power CMOS
n Input and Output TTL Compatible Design
n MIL-PRF-38534 Compliant MCMs Available
n Decoupling Capacitors and Multiple Grounds for
Low Noise
n Industrial and Military Temperature Ranges
n Industry Standard Pinouts
n Packaging – Hermetic Ceramic
l 66 Pin, 1.08" x 1.08" x .160" PGA Type, No Shoulder,
Aeroflex code# "P3"
l 66 Pin, 1.08" x 1.08" x .185" PGA Type, With
Shoulder, Aeroflex code# "P7"
l 68 Lead, .94" x .94" x .140" Single-Cavity Small
Outline Gull Wing, Aeroflex code# "F18" (Drops into
the 68 Lead JEDEC .99"SQ CQFJ footprint)
n DESC SMD – TBD
FLASH MEMORY FEATURES
n Sector Architecture (Each Die)
l 8 Equal Sectors of 64K bytes each
l Any combination of sectors can be erased with one
command sequence
n +5V Programing, +5V Supply
n Embedded Erase and Program Algorithms
n Hardware and Software Write Protection
n Internal Program Control Time.
n 10,000 Erase / Program Cycles
Pin Description
FI/O0-15 Flash Data I/O
SI/O0-15 SRAM Data I/O
A0–18 Address Inputs
FWE1-2 Flash Write Enables
SWE1-2 SRAM Write Enables
FCE1-2 Flash Chip Enables
SCE1-2 SRAM Chip Enables
OE Output Enable
NC Not Connected
VCC Power Supply
GND Ground
128Kx8

FCE2
OE
A0 – A18
SI/O0-7 SI/O8-15 FI/O0-7 FI/O8-15
8 8 8 8
FCE1 FWE2FWE1SWE2SWE1 SCE1 SCE2
Block Diagram – PGA Type Packages (P3 & P7) & CQFP (F18)
SRAM
128Kx8
SRAM
512Kx8
Flash
512Kx8
Flash
ACT–SF2816 High Speed
Note: Programming information available upon request
128Kx16 SRAM / 512Kx16 FLASH
Multichip Module