General Description
The AAT9125 30V N-Channel Power MOSFET is a
member of AnalogicTech's TrenchDMOS™ prod-
uct family. Using the ultra-high density proprietary
TrenchDMOS technology, this product demon-
strates high power handling and small size.
Applications
• DC-DC converters for mobile CPUs
• Battery-powered portable equipment
• High power density switch-mode supplies
• Point-of-use Power Supplies
Features
•V
DS(MAX)
= 30V
•I
D(MAX)
= 12.5A @ 25°C
• Low R
DS(ON)
:
•9 mΩ @V
GS
= 10V
• 14 mΩ @ V
GS
= 4.5V
SOP8 Package
DDDD
SSSG
Top View
1234
8765
AAT9125
30V N-Channel Power MOSFET
Absolute Maximum Ratings (T
A
=25°C unless otherwise noted)
Thermal Characteristics
Note 1: Mounted on 1” x 1” FR4 Copper Board, 10 sec pulse width
Symbol Description Value Units
R
θJA
Typical Junction-to-Ambient
1
50 °C/W
R
θJC
Typical Junction-to-Case 25 °C/W
Symbol Description Value Units
V
DS
Drain-Source Voltage 30
V
V
GS
Gate-Source Voltage ±20
I
D
Continuous Drain Current @ T
J
=150°C
1
T
A
= 25°C ±12.5
T
A
= 70°C ±10
A
I
DM
Pulsed Drain Current ±52
I
S
Continuous Source Current (Source-Drain Diode)
1
2.25
P
D
Maximum Power Dissipation
1
T
A
= 25°C 2.5
W
T
A
= 70°C 1.6
T
J
, T
STG
Operating Junction and Storage Temperature Range -55 to 150 °C
Preliminary
Information
9125.2001.12.0.9 1
PWMSwitch
™