Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com 1
Specifications subject to change without notice. 8/00A
37–39 GHz GaAs MMIC
Power Amplifier
Features
a73 Single Bias Supply Operation (5.5 V)
a73 18 dB Typical Small Signal Gain
a73 19 dBm Typical P
1 dB
Output Power
at 39 GHz
a73 0.25 µm Ti/Pd/Au Gates
a73 100% On-Wafer RF and DC Testing
a73 100% Visual Inspection to MIL-STD-883
MT 2010
Chip Outline
AA038P5-00
Description
Alpha’s three-stage reactively-matched Ka band GaAs
MMIC amplifier has a typical P
1 dB
of 19 dBm with 17 dB
associated gain over the band 37–39 GHz.The chip uses
Alpha’s proven 0.25 µm MESFET technology, and is
based upon MBE layers and electron beam lithography
for the highest uniformity and repeatability. The FETs
employ surface passivation to ensure a rugged, reliable
part with through-substrate via holes and gold-based
backside metallization to facilitate an epoxy die attach
process. All chips are screened for small signal
S-parameters and power characteristics prior to shipment
for guaranteed performance. A broad range of
applications exist in both the high reliability and
commercial areas where power and gain are required.
Parameter Condition Symbol Min. Typ. Max. Unit
Drain Current (at Saturation) I
DS
200 370 mA
Small Signal Gain F = 37–39 GHz G 16 18 dB
Input Return Loss F = 37–39 GHz RL
I
-13 -10 dB
Output Return Loss F = 37–39 GHz RL
O
-20 -10 dB
Output Power at 1 dB Gain Compression F = 39 GHz P
1 dB
16 19 dBm
Saturated Output Power F = 39 GHz P
SAT
19 21 dBm
Gain at Saturation F = 39 GHz G
SAT
15 dB
Thermal Resistance
1
Θ
JC
51 °C/W
Electrical Specifications at 25°C (V
DS
= 5.5 V)
1. Calculated value based on measurement of discrete FET.
0.000
0.000
1.230
1.700
3.4002.9892.1661.342
0.112
0.470
1.588
Dimensions indicated in mm.
All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.
Chip thickness = 0.1 mm.
Characteristic Value
Operating Temperature (T
C
) -55°C to +90°C
Storage Temperature (T
ST
) -65°C to +150°C
Bias Voltage (V
D
)7 V
DC
Power In (P
IN
) 19 dBm
Junction Temperature (T
J
) 175°C
Absolute Maximum Ratings