April 2000
2000 Fairchild Semiconductor Corporation NDS9410A Rev B(W)
NDS9410A
Single N-Channel Enhancement Mode Field Effect Transistor
General Description
This N-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor’s advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
fast switching, low in-line power loss and resistance to
transients are needed.
Features
• 7.3 A, 30 V. RDS(ON) = 28 mΩ @ VGS = 10 V
R
DS(ON)
= 42 mΩ @ V
GS
= 4.5 V
• High performance trench technology for extremely
low R
DS(ON)
• High power and current handling capability in a
widely used surface mount package.
S
D
S
S
SO-8
D
D
D
G
4
3
2
1
5
6
7
8
Absolute Maximum Ratings TA=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage 30 V
V
GSS
Gate-Source Voltage ±20 V
I
D
Drain Current – Continuous (Note 1a) 7.3 A
– Pulsed 20
Power Dissipation for Single Operation (Note 1a) 2.5
(Note 1b) 1.2
P
D
(Note 1c) 1.0
W
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W
R
θJC
Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
NDS9410A NDS9410A 13’’ 12mm 2500 units
NDS9410
A