1996 Microchip Technology Inc.

Preliminary

DS21131C-page 1

FEATURES

• Single supply with programming operation down
to 2.5V
• Low power CMOS technology
- 1 mA active current typical
-5

mA standby current (typical) at 3.0V
• ORG pin selectable memory configuration
1024 x 8 or 512 x 16 bit organization (93LC76)
2048 x 8 or 1024 x 16 bit organization (93LC86)
• Self-timed ERASE and WRITE cycles
(including auto-erase)
• Automatic ERAL before WRAL
• Power on/off data protection circuitry
• Industry standard 3-wire serial I/O
• Device status signal during ERASE/WRITE cycles
• Sequential READ function
• 10,000,000 ERASE/WRITE cycles guaranteed
• Data retention > 200 years
• 8-pin PDIP/SOIC package
• Temperature ranges available

DESCRIPTION

The Microchip Technology Inc. 93LC76/86 are 8K and
16K low voltage serial Electrically Erasable PROMs.
The device memory is configured as x8 or x16 bits
depending on the ORG pin setup. Advanced CMOS
technology makes these devices ideal for low power
non-volatile memory applications. These devices also
have a Program Enable (PE) pin to allow the user to
write protect the entire contents of the memory array.
The 93LC76/86 is available in standard 8-pin DIP and
8-pin surface mount SOIC packages.
- Commercial (C) 0



C to +70



C
- Industrial (I) -40



C to +85



C

PACKAGE TYPES
BLOCK DIAGRAM
SOIC Package
DIP Package
CS
CLK
DI
DO V
SS
PE
V
CC
ORG
CS
CLK
DI
DO
V
CC
PE
ORG
V
SS
93LC76/86
93LC76/86
1
2
3
4
8
7
6
5
1
2
3
4
8
7
6
5
DO
CS
CLK
V
CC
V
SS
Memory
Array
Address
Decoder
Data
Register
Counter
Address
Output
Buffer
Mode
Decode
Logic
Generator
Clock
DI
PE

93LC76/86

8K/16K 2.5V Microwire



Serial EEPROM

Microwire is a registered trademark of National Semiconductor Incorporated.

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