ST93CS46
ST93CS47
1K (64 x 16) SERIAL MICROWIRE EEPROM
NOT FOR NEW DESIGN
June 1997 1/16
This is information on a product still in production but not recommended for new designs.
AI00884B
D
V
CC
ST93CS46
ST93CS47
V
SS
CQ
PRE
W
S
Figure 1. Logic Diagram
1 MILLION ERASE/WRITE CYCLES, with
40 YEARS DATA RETENTION
SELF-TIMED PROGRAMMING CYCLE with
AUTO-ERASE
READY/BUSY SIGNAL DURING
PROGRAMMING
SINGLE SUPPLY VOLTAGE
– 3V to 5.5V for the ST93CS46
– 2.5V to 5.5V for the ST93CS47
USER DEFINED WRITE PROTECTED AREA
PAGE WRITE MODE (4 WORDS)
SEQUENTIAL READ OPERATION
5ms TYPICAL PROGRAMMING TIME
ST93CS46 and ST93CS47 are replaced by
the M93S46
DESCRIPTION
The ST93CS46 and ST93CS47 are 1K bit Electri-
cally Erasable Programmable Memory (EEPROM)
fabricatedwith SGS-THOMSON’s High Endurance
Single Polysilicon CMOS technology. The memory
is accessed through a serial input D and output Q.
The 1K bit memory is organized as 64 x 16 bit
words.The memory is accessed by a set of instruc-
tions which include Read, Write, Page Write, Write
All and instructions used to set the memory protec-
tion. A Read instruction loads the address of the
first word to be read into an internal address
pointer.
S Chip Select Input
D Serial Data Input
Q Serial Data Output
C Serial Clock
PRE Protect Enable
W Write Enable
VCC Supply Voltage
V
SS
Ground
Table 1. Signal Names
8
1
SO8 (M)
150mil Width
8
1
PSDIP8 (B)
0.4mm Frame